Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
MMSZ4697T

MMSZ4697T

Rectron USA

DIODE ZENER 10V 300MW SOD-523

8000

MMSZ5232BS

MMSZ5232BS

Rectron USA

DIODE ZENER 5.6V 500MW SOD323

0

MMSZ4692T

MMSZ4692T

Rectron USA

DIODE ZENER 6.8V 300MW SOD-523

400000

MMSZ5248BS

MMSZ5248BS

Rectron USA

DIODE ZENER 18V 500MW SOD-323

0

1SMAF4752A

1SMAF4752A

Rectron USA

DIODE ZENER 33V 1W SMAF

0

FM4753W

FM4753W

Rectron USA

DIODE ZENER GLASS 36V 1W SMA

0

BZX584C6V8

BZX584C6V8

Rectron USA

DIODE ZENER 6.8V 200MW SOD-523

0

MMBZ5222BW

MMBZ5222BW

Rectron USA

DIODE ZENER 2.5V 200MW SOT-323

0

BZX85C10-T-M

BZX85C10-T-M

Rectron USA

DIODE ZENER 10V 1.3W DO-41

0

Z200A

Z200A

Rectron USA

DIODE ZENER 200V 1W DO-41

0

MMSZ4683

MMSZ4683

Rectron USA

DIODE ZENER 3V 500MW SOD-123

0

BZX984C18

BZX984C18

Rectron USA

DIODE ZENER 18V 150MW SOD-923

0

BZV55C 5.1BSA

BZV55C 5.1BSA

Rectron USA

DIODE ZENER 5.1V 500MW LL-34

0

SMB5381B

SMB5381B

Rectron USA

DIODE ZENER 130V 5W SMB

0

MMBZ5243BW

MMBZ5243BW

Rectron USA

DIODE ZENER 13V 200MW SOT-323

0

1SMAF4754A

1SMAF4754A

Rectron USA

DIODE ZENER 39V 1W SMAF

0

BZT52B36S

BZT52B36S

Rectron USA

DIODE ZENER 36V 500MW SOD-323

0

M3Z3V9B

M3Z3V9B

Rectron USA

DIODE ZENER 3.9V 200MW SOD-323F

0

1SMA5934B

1SMA5934B

Rectron USA

DIODE ZENER 24V 1.5W SMA

0

MMSZ4691T

MMSZ4691T

Rectron USA

DIODE ZENER 6.2V 300MW SOD-523

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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