Diodes - RF

Image Part Number Description / PDF Quantity Rfq
BA895E6327

BA895E6327

IR (Infineon Technologies)

PIN DIODE

21000

BAT15099E6433HTMA1

BAT15099E6433HTMA1

IR (Infineon Technologies)

DIODE SCHOTTKY 4V 100MW SOT143-4

9978

BAR6302WH6327XTSA1

BAR6302WH6327XTSA1

IR (Infineon Technologies)

SILICON PIN DIODE

0

BAR6402LRHE6327XTSA1

BAR6402LRHE6327XTSA1

IR (Infineon Technologies)

BAR64 - SILICON PIN DIODE

30000

BAS70-06E6327

BAS70-06E6327

IR (Infineon Technologies)

BAS70 - HIGH SPEED SWITCHING, CL

222000

BAT68-06E6327

BAT68-06E6327

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

150000

BA595E6327HTSA1

BA595E6327HTSA1

IR (Infineon Technologies)

PIN DIODE, 50V V(BR)

4826

BAR6404E6327HTSA1

BAR6404E6327HTSA1

IR (Infineon Technologies)

RF DIODE PIN 150V 250MW SOT23-3

9000

BA89202VH6327XTSA1

BA89202VH6327XTSA1

IR (Infineon Technologies)

SILICON RF SWITCHING DIODE

40800

BAT6806E6327HTSA1

BAT6806E6327HTSA1

IR (Infineon Technologies)

RF MIXER + DETECT SCHOTTKY DIODE

3000

BA595E6359HTMA1

BA595E6359HTMA1

IR (Infineon Technologies)

RF PIN DIODE > ANTENNA SWITCH

0

BAS70-06E6433

BAS70-06E6433

IR (Infineon Technologies)

SCHOTTKY DIODE - HIGH SPEED SWIT

20000

BAS70E6327

BAS70E6327

IR (Infineon Technologies)

BAS70 - HIGH SPEED SWITCHING, CL

150500

BAR6702VH6327XTSA1

BAR6702VH6327XTSA1

IR (Infineon Technologies)

RF DIODE PIN 150V 250MW SC79-2

0

BAT 17-05W H6327

BAT 17-05W H6327

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

12000

BAR63-03WE6433

BAR63-03WE6433

IR (Infineon Technologies)

PIN DIODE, 50V V(BR)

7000

BA895H6327XTSA1

BA895H6327XTSA1

IR (Infineon Technologies)

PIN DIODE

9000

BAT63-07WE6327

BAT63-07WE6327

IR (Infineon Technologies)

MIXER DIODE, LOW BARRIER

24000

BAR6403WE6327HTSA1

BAR6403WE6327HTSA1

IR (Infineon Technologies)

RF DIODE PIN 150V 250MW SOD323-2

10462

BAR65-03WE6327

BAR65-03WE6327

IR (Infineon Technologies)

BAR65 - PIN DIODE

75000

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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