Diodes - RF

Image Part Number Description / PDF Quantity Rfq
BAR9002ELSE6327XTSA1

BAR9002ELSE6327XTSA1

IR (Infineon Technologies)

RF DIODE PIN 80V 250MW TSSLP-2

45457

BAT15099E6327HTSA1

BAT15099E6327HTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 4V 100MW SOT143-4

2921

BAR6502VH6327XTSA1

BAR6502VH6327XTSA1

IR (Infineon Technologies)

RF DIODE PIN 30V 250MW SC79-2

2884

BAR61E6327HTSA1

BAR61E6327HTSA1

IR (Infineon Technologies)

RF DIODE PIN 100V 250MW SOT143

7

BAR6302WH6327

BAR6302WH6327

IR (Infineon Technologies)

PIN DIODE, 50V V(BR)

0

BAR63-04E6327

BAR63-04E6327

IR (Infineon Technologies)

BAR63 - PIN DIODE

2584

BAR6304E6327HTSA1

BAR6304E6327HTSA1

IR (Infineon Technologies)

RF DIODE PIN 50V 250MW SOT23-3

140

BAR6306WH6327XTSA1

BAR6306WH6327XTSA1

IR (Infineon Technologies)

RF DIODE PIN 50V 250MW SOT323-3

2475

BAT17-05WH6327

BAT17-05WH6327

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

9000

BAT1504RE6152HTSA1

BAT1504RE6152HTSA1

IR (Infineon Technologies)

RF DIODE SCHOTTKY 4V SOT23-3

699

BAR141E6327HTSA1

BAR141E6327HTSA1

IR (Infineon Technologies)

RF DIODE PIN 100V 250MW SOT23-3

2759

BAT62E6327

BAT62E6327

IR (Infineon Technologies)

MIXER DIODE, LOW BARRIER

13473

BAT15-05W

BAT15-05W

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

20061

BAT1504WH6327XTSA1

BAT1504WH6327XTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 4V 100MW SOT323-3

13228

BAS70-05E6327

BAS70-05E6327

IR (Infineon Technologies)

BAS70 - HIGH SPEED SWITCHING, CL

48000

BAR64-03WE6327

BAR64-03WE6327

IR (Infineon Technologies)

BAR64 - PIN DIODE

6000

BAS70-04E6327

BAS70-04E6327

IR (Infineon Technologies)

BAS70 - HIGH SPEED SWITCHING, CL

19462

BAT1704E6327HTSA1

BAT1704E6327HTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 4V 150MW SOT23-3

0

BAT2402LSE6327XTSA1

BAT2402LSE6327XTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 4V 100MW TSSLP-2

13340

BAR 95-02LS E6327

BAR 95-02LS E6327

IR (Infineon Technologies)

RF DIODE PIN 50V 150MW TSSLP-2

4697

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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