Diodes - RF

Image Part Number Description / PDF Quantity Rfq
BAT1705E6327HTSA1

BAT1705E6327HTSA1

IR (Infineon Technologies)

RF MIXER + DETECT SCHOTTKY DIODE

129000

BAT15-05WH6327XTSA1

BAT15-05WH6327XTSA1

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

3000

BAT1502LRHE6327XTSA1

BAT1502LRHE6327XTSA1

IR (Infineon Technologies)

RF DIODE SCHOTTKY 4V 100MW TSLP2

15000

BAT15-099R

BAT15-099R

IR (Infineon Technologies)

MIXER DIODE, LOW BARRIER, X BAND

766

BAR9002ELE6327XTMA1

BAR9002ELE6327XTMA1

IR (Infineon Technologies)

RF DIODE PIN 80V 250MW TSLP-2-19

11014

BAR63-05E6327

BAR63-05E6327

IR (Infineon Technologies)

BAR63 - PIN DIODE

63000

BAR6304WH6327XTSA1

BAR6304WH6327XTSA1

IR (Infineon Technologies)

RF DIODE PIN 50V 250MW SOT323-3

0

BAT17E6327HTSA1

BAT17E6327HTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 4V 150MW SOT23-3

5681

BAT17-06WE6327

BAT17-06WE6327

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

6000

BAT68E6327HTSA1

BAT68E6327HTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 8V 150MW SOT23-3

10042

BAT17E6327

BAT17E6327

IR (Infineon Technologies)

BAT17 - RF MIXER AND DETECTOR SC

6000

BAS70-07E6433

BAS70-07E6433

IR (Infineon Technologies)

SCHOTTKY DIODE - HIGH SPEED SWIT

170000

BAR6306E6327HTSA1

BAR6306E6327HTSA1

IR (Infineon Technologies)

RF DIODE PIN 50V 250MW SOT23-3

0

BAR81WH6327XTSA1

BAR81WH6327XTSA1

IR (Infineon Technologies)

DIODE STANDAR 30V 100MW SOT343-4

560

BAT63-07WH6327

BAT63-07WH6327

IR (Infineon Technologies)

MIXER DIODE, LOW BARRIER

3000

BAR81WE6327

BAR81WE6327

IR (Infineon Technologies)

PIN DIODE

3000

BAR8902LRHE6327XTSA1

BAR8902LRHE6327XTSA1

IR (Infineon Technologies)

PIN DIODE, 80V V(BR)

45000

BAR64-03W

BAR64-03W

IR (Infineon Technologies)

BAR64 - PIN DIODE

29275

BAT1706WH6327XTSA1

BAT1706WH6327XTSA1

IR (Infineon Technologies)

SCHOTTKY DIODE - RF MIXER + DETE

9000

BAR 67-04 E6327

BAR 67-04 E6327

IR (Infineon Technologies)

PIN DIODE, 150V V(BR)

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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