Diodes - RF

Image Part Number Description / PDF Quantity Rfq
BAT62-02WE6327

BAT62-02WE6327

IR (Infineon Technologies)

MIXER DIODE, LOW BARRIER

0

BAT62-02WH6327

BAT62-02WH6327

IR (Infineon Technologies)

MIXER DIODE, LOW BARRIER

0

BAT15-05WH6327XTSA3

BAT15-05WH6327XTSA3

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

3000

BA 892-02V E6433

BA 892-02V E6433

IR (Infineon Technologies)

RF DIODE STANDARD 35V SC79-2

0

BAT6202WH6327XTSA1

BAT6202WH6327XTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 40V 100MW SCD80

0

BAR 64-02V E6327

BAR 64-02V E6327

IR (Infineon Technologies)

RF DIODE PIN 150V 250MW SC79-2

0

BAT6207WE6327HTSA1

BAT6207WE6327HTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 40V 100MW SOT343

0

BAT6202LSE6327XTSA1

BAT6202LSE6327XTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 40V 100MW TSSLP-2

0

BAR 64-02LRH E6433

BAR 64-02LRH E6433

IR (Infineon Technologies)

RF DIODE PIN 150V 250MW TSLP-2

0

BAT6806WE6327HTSA1

BAT6806WE6327HTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 8V 150MW SOT323-3

0

BAT6806WH6327XTSA1

BAT6806WH6327XTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 8V 150MW SOT323-3

0

BAR6405WE6327BTSA1

BAR6405WE6327BTSA1

IR (Infineon Technologies)

RF DIODE PIN 150V 250MW SOT323-3

0

BAT1505WH6327XTSA1

BAT1505WH6327XTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 4V 100MW SOT323-3

0

BA 892-02V E6327

BA 892-02V E6327

IR (Infineon Technologies)

RF DIODE STANDARD 35V SC79-2

0

BA 779 E6327

BA 779 E6327

IR (Infineon Technologies)

RF DIODE PIN 50V SOT23-3

0

BA 892 L6327

BA 892 L6327

IR (Infineon Technologies)

RF DIODE STANDARD 35V SCD80

0

BAT 15-02LS E6327

BAT 15-02LS E6327

IR (Infineon Technologies)

RF DIODE SCHOTTKY 4V TSSLP-2

0

BAT 68-08S E6327

BAT 68-08S E6327

IR (Infineon Technologies)

DIODE SCHOTTKY 8V 150MW SOT363-6

0

BAR90098LRHE6327XTSA1

BAR90098LRHE6327XTSA1

IR (Infineon Technologies)

RF DIODE PIN 80V 250MW TSLP-4-7

0

BAR 67-02V E6327

BAR 67-02V E6327

IR (Infineon Technologies)

RF DIODE PIN 150V 250MW SC79-2

0

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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