Diodes - RF

Image Part Number Description / PDF Quantity Rfq
CLA4608-085LF

CLA4608-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 180V 2W 3QFN

82076000

BAT15-05W

BAT15-05W

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

20061

BAP1321-03,115

BAP1321-03,115

NXP Semiconductors

BAP1321-03 - PIN DIODE

9189

MADP-007448-12790T

MADP-007448-12790T

Metelics (MACOM Technology Solutions)

PIN, PLASTIC,SINGLE, TAPE AND RE

29586000

MMBV3401LT3

MMBV3401LT3

PIN DIODE, 35V V(BR)

580000

SMP1340-040LF

SMP1340-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 750MW 0402

1868

MA4L011-134

MA4L011-134

Metelics (MACOM Technology Solutions)

RF DIODE PIN 35V CHIP

100

MA40205-119

MA40205-119

Metelics (MACOM Technology Solutions)

DIODE,SCHOTTKY,HI-REL,CERAMIC,SI

100

SMP1345-040LF

SMP1345-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 750MW 0402

24239

MSS20-145-0402

MSS20-145-0402

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, 0402

25

MA4P7002F-1072T

MA4P7002F-1072T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 200V 10W

0

CLA4607-085LF

CLA4607-085LF

Skyworks Solutions, Inc.

RF DIODE PIN 180V 13W 3QFN

11913

MMBD301LT1G

MMBD301LT1G

MIXER DIODE, ULTRA HIGH FREQUENC

427673

MA4E1339B1-287T

MA4E1339B1-287T

Metelics (MACOM Technology Solutions)

SCHOTTKY PLASTIC LEAD-FREE

1967

BAT1504WH6327XTSA1

BAT1504WH6327XTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 4V 100MW SOT323-3

13228

MSS60-144-E25

MSS60-144-E25

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, E25

50125

BAP50-03-TP

BAP50-03-TP

Micro Commercial Components (MCC)

RF DIODE PIN 50V 200MW SOD323

0

MA4P7493-134

MA4P7493-134

Metelics (MACOM Technology Solutions)

PMG205

3900

MA4P7104B-401T

MA4P7104B-401T

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC,AXIAL,HI-PAX

1000

MSS30-142-B10B

MSS30-142-B10B

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, B10B

100

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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