Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MSS40-244-B20

MSS40-244-B20

Metelics (MACOM Technology Solutions)

COM SCHOTTKY-BEAMLEAD, B20

125

MSS20-055-H27

MSS20-055-H27

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, H27

30

MSS30-B53-H40

MSS30-B53-H40

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, H40

30

MA4P7436CA-287T

MA4P7436CA-287T

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,LEADFREE

29803000

MA4P7433-1141T

MA4P7433-1141T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 75V 200MW SOD323

298363000

MA4P7102F-1072T

MA4P7102F-1072T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 200V 11.5W

1566

BAT17-05WH6327

BAT17-05WH6327

IR (Infineon Technologies)

RF MIXER/DETECTOR SCHOTTKY DIODE

9000

1SV250-TB-E

1SV250-TB-E

PIN DIODE

69000

LXP1002-23-0

LXP1002-23-0

Roving Networks / Microchip Technology

SI PIN NON HERMETIC EPSM SMT

258

BAP64Q,125

BAP64Q,125

NXP Semiconductors

RF DIODE PIN 100V 125MW 5TSOP

0

SMS7630-006LF

SMS7630-006LF

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 1V 75MW SOT23

83303

BAT1504RE6152HTSA1

BAT1504RE6152HTSA1

IR (Infineon Technologies)

RF DIODE SCHOTTKY 4V SOT23-3

699

MA4P7452F-1072T

MA4P7452F-1072T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 150V 10W

1711

SMP1320-011LF

SMP1320-011LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SOD323

2147483647

BAR141E6327HTSA1

BAR141E6327HTSA1

IR (Infineon Technologies)

RF DIODE PIN 100V 250MW SOT23-3

2759

BAT62E6327

BAT62E6327

IR (Infineon Technologies)

MIXER DIODE, LOW BARRIER

13473

SMP1334-084LF

SMP1334-084LF

Skyworks Solutions, Inc.

RF DIODE PIN 200V 1W 2QFN

43513000

MA2707700L

MA2707700L

Panasonic

RF DIODE STANDAR 35V SSSMINI2-F1

3386

MSS60-848-E45

MSS60-848-E45

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, E45-1

25

MMBD352WT1

MMBD352WT1

MIXER DIODE

1998

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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