Diodes - RF

Image Part Number Description / PDF Quantity Rfq
BAP65-05W,115

BAP65-05W,115

NXP Semiconductors

DIODE PIN 30V 100MA SOT323

68875

MSD700-19-1-R

MSD700-19-1-R

Metelics (MACOM Technology Solutions)

DIODE,SRD,EPOXY ENCAPSULATED,CS1

250

MA4PH236-1072T

MA4PH236-1072T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 600V 1W

26621500

MA4P606-30

MA4P606-30

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC_PKG,SI

100

MPN7453A-T86

MPN7453A-T86

Metelics (MACOM Technology Solutions)

DIODE,PIN-CHIP-PACKAGE, T86

50

MA4P7433ST-287T

MA4P7433ST-287T

Metelics (MACOM Technology Solutions)

DIODE,PIN,PLASTIC,LEADFREE

1347

BAR6302WH6327

BAR6302WH6327

IR (Infineon Technologies)

PIN DIODE, 50V V(BR)

0

SMS7621-060

SMS7621-060

Skyworks Solutions, Inc.

RF DIODE SCHOTTKY 2V 75MW 0201

0

MSS40-148-B10B

MSS40-148-B10B

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, B10B

200650

RN771VTE-17

RN771VTE-17

ROHM Semiconductor

RF DIODE PIN 50V UMD2

37

MSS20-047-E20

MSS20-047-E20

Metelics (MACOM Technology Solutions)

COM SCHOTTKY-BEAMLEAD-PKG, E20

100

UPP1002E3/TR7

UPP1002E3/TR7

Roving Networks / Microchip Technology

RF DIODE PIN 100V 2.5W DO216

0

MSS20-141-B10D

MSS20-141-B10D

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, B10D

125925

SMSA3923-011LF

SMSA3923-011LF

Skyworks Solutions, Inc.

DIODE SCHOTTKY 20V 75MW SOD323

18653

BAR63-04E6327

BAR63-04E6327

IR (Infineon Technologies)

BAR63 - PIN DIODE

2584

BAR6304E6327HTSA1

BAR6304E6327HTSA1

IR (Infineon Technologies)

RF DIODE PIN 50V 250MW SOT23-3

140

1SS390SMT2R

1SS390SMT2R

ROHM Semiconductor

BAND SWITCHING DIODES - 1SS390SM

6196

BAR6306WH6327XTSA1

BAR6306WH6327XTSA1

IR (Infineon Technologies)

RF DIODE PIN 50V 250MW SOT323-3

2475

MA4P7455-1141T

MA4P7455-1141T

Metelics (MACOM Technology Solutions)

RF DIODE PIN 100V 200MW SOD323

977

RN731VFHTE-17

RN731VFHTE-17

ROHM Semiconductor

RF DIODE PIN 50V UMD2

2880

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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