Diodes - RF

Image Part Number Description / PDF Quantity Rfq
MBD101G

MBD101G

MIXER DIODE

20272

MSS60-PCR46-E45SSM

MSS60-PCR46-E45SSM

Metelics (MACOM Technology Solutions)

COMM SCHOTTKY BEAMLEAD PACKAGE,

29

BAP65-03,115

BAP65-03,115

NXP Semiconductors

RF DIODE PIN 30V 500MW SOD323

4479

MPN7453B-T83

MPN7453B-T83

Metelics (MACOM Technology Solutions)

DIODE,PIN-CHIP-PACKAGE, T83

50

SMMBD701LT1G

SMMBD701LT1G

MIXER DIODE

114000

JDV2S10FS(TPL3)

JDV2S10FS(TPL3)

Toshiba Electronic Devices and Storage Corporation

RF DIODE STANDARD 10V FSC

533

MSS20-046-E28X

MSS20-046-E28X

Metelics (MACOM Technology Solutions)

SCHOTTKY DIODE,BEAMLEAD, E28-S

100

BAS70-05E6327

BAS70-05E6327

IR (Infineon Technologies)

BAS70 - HIGH SPEED SWITCHING, CL

48000

BAR64V-05W-E3-08

BAR64V-05W-E3-08

Vishay General Semiconductor – Diodes Division

RF DIODE PIN 100V SOT323

0

MA4P606-258

MA4P606-258

Metelics (MACOM Technology Solutions)

DIODE,PIN,CERAMIC_PKG,SI

60

LXP1002-23-2

LXP1002-23-2

Roving Networks / Microchip Technology

SI PIN NON HERMETIC EPSM SMT

131

MA4P604-131

MA4P604-131

Metelics (MACOM Technology Solutions)

RF DIODE PIN 1000V DIE

100

BAP50-04W,115

BAP50-04W,115

NXP Semiconductors

RF DIODE PIN 50V 240MW SOT323-3

3031

BAR64-03WE6327

BAR64-03WE6327

IR (Infineon Technologies)

BAR64 - PIN DIODE

6000

RN779FT106

RN779FT106

ROHM Semiconductor

RF DIODE PIN 50V UMD3

0

SMP1320-079LF

SMP1320-079LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 250MW SC79

5680

SMP1330-040LF

SMP1330-040LF

Skyworks Solutions, Inc.

RF DIODE PIN 50V 750MW 0402

137747

BAS70-04E6327

BAS70-04E6327

IR (Infineon Technologies)

BAS70 - HIGH SPEED SWITCHING, CL

19462

BAT1704E6327HTSA1

BAT1704E6327HTSA1

IR (Infineon Technologies)

DIODE SCHOTTKY 4V 150MW SOT23-3

0

MA2SP050GL

MA2SP050GL

Panasonic

RF DIODE PIN 60V SSMINI2-F4

5757

Diodes - RF

1. Overview

RF diodes are specialized semiconductor devices designed to operate at radio frequencies (typically above 30 kHz). They enable signal processing, switching, and amplification in high-frequency circuits. These components play a critical role in modern communication systems, radar, and wireless infrastructure by controlling RF signal flow and maintaining signal integrity.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
PIN DiodeHigh switching speed, low capacitanceRF switches, attenuators, phase shifters
Schottky DiodeLow forward voltage, fast recovery timeRF detectors, mixers, power rectifiers
Varactor DiodeVoltage-dependent capacitanceTunable filters, frequency multipliers
Gunn DiodeNegative resistance characteristicMillimeter-wave oscillators, radar sensors
Avalanche DiodeControlled reverse breakdownHigh-power RF switching, protection circuits

3. Structure and Composition

RF diodes typically use silicon (Si) or compound semiconductors like GaAs. Key structural elements include: - Anode/cathode metallization layers - Active semiconductor region (e.g., P-I-N junction) - Passivation layer for surface protection - Standard package formats (SOD-323, SMA, or flip-chip) Advanced designs employ epitaxial layer engineering to minimize parasitic capacitance and optimize carrier mobility.

4. Key Technical Parameters

ParameterTypical RangeSignificance
Frequency Range100 MHz - 100 GHzDetermines operational bandwidth
Reverse Breakdown Voltage5-200 VDefines power handling capability
Forward Current (IF)10 mA - 1 AAffects switching performance
Capacitance (Cj)0.1-5 pFImpacts high-frequency response
Power Dissipation100 mW - 10 WThermal management consideration
Insertion Loss0.1-1.5 dBSignal transmission efficiency
Switching Time1-100 nsDynamic performance metric

5. Application Areas

Major application sectors include: - Telecommunications (5G base stations, satellite terminals) - Defense electronics (radar TR modules, ECM systems) - Test and measurement equipment (spectrum analyzers, signal generators) - Medical devices (MRI gradient coil drivers) - Industrial IoT (wireless sensors, RFID readers)

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMMD310040 GHz PIN diode, 0.25 pF Cj
STMicroelectronics1N571170 V Schottky diode, 1 ns recovery time
InfineonBAR64-02VVaractor diode, 4:1 tuning ratio
QorvoDMK4035SSGaAs MMIC diode, 25 W power handling
SkyworksASD2100Avalanche diode, 0.15 dB insertion loss

7. Selection Recommendations

Key selection criteria: - Frequency and power requirements - Package compatibility (SMD vs. through-hole) - Temperature stability (operating range -55 C to +175 C) - Cost versus performance trade-offs - Supply chain availability For example: Use PIN diodes for high-speed switching in base station antennas, Schottky diodes for low-noise microwave detection.

8. Industry Trends

Current development trends include: - Transition to wide-bandgap materials (SiC, GaN) - Integration with CMOS for smart RF systems - Development of terahertz (THz) diodes - Miniaturization for 5G phased arrays - Enhanced reliability for automotive radar (76-81 GHz)

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