Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
FR12J02

FR12J02

GeneSiC Semiconductor

DIODE GEN PURP 600V 12A DO4

0

S150J

S150J

GeneSiC Semiconductor

DIODE GEN PURP 600V 150A DO205AA

0

MBR7535R

MBR7535R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 35V DO5

0

MBR35100

MBR35100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 35A DO4

0

S70G

S70G

GeneSiC Semiconductor

DIODE GEN PURP 400V 70A DO5

0

MBR3540R

MBR3540R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 40V DO4

0

1N3766R

1N3766R

GeneSiC Semiconductor

DIODE GEN PURP REV 800V 35A DO5

0

S70BR

S70BR

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 70A DO5

0

1N3293A

1N3293A

GeneSiC Semiconductor

DIODE GEN PURP 600V 100A DO205AA

0

GKN240/04

GKN240/04

GeneSiC Semiconductor

DIODE GEN PURP 400V 320A DO205AB

0

1N2129AR

1N2129AR

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 60A DO5

0

S85KR

S85KR

GeneSiC Semiconductor

DIODE GEN PURP REV 800V 85A DO5

0

MBR8040

MBR8040

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 80A DO5

0

FR70B05

FR70B05

GeneSiC Semiconductor

DIODE GEN PURP 100V 70A DO5

0

S25JR

S25JR

GeneSiC Semiconductor

DIODE GEN PURP 600V 25A DO220AA

0

S70QR

S70QR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.2KV 70A DO5

0

150K100A

150K100A

GeneSiC Semiconductor

DIODE GEN PURP 1KV 150A DO205

0

GKR71/14

GKR71/14

GeneSiC Semiconductor

DIODE GEN PURP 1.4KV 95A DO5

0

MBR8030

MBR8030

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 80A DO5

0

S400KR

S400KR

GeneSiC Semiconductor

DIODE GEN PURP 800V 400A DO9

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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