Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
S6MR

S6MR

GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 6A DO4

0

MBR6045R

MBR6045R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 45V DO5

0

S16G

S16G

GeneSiC Semiconductor

DIODE GEN PURP 400V 16A DO203AA

0

GB05SLT12-220

GB05SLT12-220

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 5A TO220AC

0

1N8034-GA

1N8034-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 650V 9.4A TO257

0

GKN26/08

GKN26/08

GeneSiC Semiconductor

DIODE GEN PURP 800V 25A DO4

0

MBRH30045L

MBRH30045L

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 300A D67

0

MBRH15045L

MBRH15045L

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 150A D-67

0

MBRH15020RL

MBRH15020RL

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 150A D-67

0

MBRH20045RL

MBRH20045RL

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 200A D-67

0

GB05SLT12-252

GB05SLT12-252

GeneSiC Semiconductor

DIODE SILICON 1.2KV 5A TO252

0

MBRH20030L

MBRH20030L

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 200A D-67

0

MBRH15035RL

MBRH15035RL

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 150A D-67

0

MBRH20030RL

MBRH20030RL

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 200A D-67

0

1N8033-GA

1N8033-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 650V 4.3A TO276

0

MBRH20020RL

MBRH20020RL

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 200A D-67

0

1N8024-GA

1N8024-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 750MA TO257

0

1N8026-GA

1N8026-GA

GeneSiC Semiconductor

DIODE SILICON 1.2KV 8A TO257

0

MBRH15030L

MBRH15030L

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 150A D-67

0

1N8030-GA

1N8030-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 650V 750MA TO257

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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