Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
GB10SLT12-252

GB10SLT12-252

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 10A TO252

0

MBRH30040L

MBRH30040L

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 300A D67

0

MBRH15040RL

MBRH15040RL

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 150A D-67

0

MBRH20040RL

MBRH20040RL

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 200A D-67

0

MBRH30020RL

MBRH30020RL

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 300A D67

0

1N8031-GA

1N8031-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 650V 1A TO276

0

1N8028-GA

1N8028-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 9.4A TO257

0

MBRH15040L

MBRH15040L

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 150A D-67

0

MBRH30040RL

MBRH30040RL

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 300A D67

0

MBRH20035RL

MBRH20035RL

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 200A D-67

0

MBRH20045L

MBRH20045L

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 200A D-67

0

MBRH15020L

MBRH15020L

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 150A D-67

0

MBRH30035RL

MBRH30035RL

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 300A D67

0

GB01SLT12-220

GB01SLT12-220

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 1A TO220AC

0

MBRH30020L

MBRH30020L

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 300A D67

0

MBRH15045RL

MBRH15045RL

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 150A D-67

0

MBRH20020L

MBRH20020L

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 200A D-67

0

GAP05SLT80-220

GAP05SLT80-220

GeneSiC Semiconductor

DIODE SCHOTTKY 8KV 50MA AXIAL

0

MBRH15035L

MBRH15035L

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 150A D-67

0

MBRH20035L

MBRH20035L

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 200A D-67

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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