Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
MBR8040R

MBR8040R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 40V DO5

0

S12MR

S12MR

GeneSiC Semiconductor

DIODE GEN PURP REV 1KV 12A DO4

0

MBR7520

MBR7520

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 75A DO5

0

MURH7060

MURH7060

GeneSiC Semiconductor

DIODE GEN PURP 600V 70A D-67

0

FR70G05

FR70G05

GeneSiC Semiconductor

DIODE GEN PURP 400V 70A DO5

0

FR6A05

FR6A05

GeneSiC Semiconductor

DIODE GEN PURP 50V 16A DO4

0

S6M

S6M

GeneSiC Semiconductor

DIODE GEN PURP 1KV 6A DO4

0

FR85G05

FR85G05

GeneSiC Semiconductor

DIODE GEN PURP 400V 85A DO5

0

S25DR

S25DR

GeneSiC Semiconductor

DIODE GEN PURP 200V 25A DO220AA

0

GKR240/16

GKR240/16

GeneSiC Semiconductor

DIODE GEN PURP 1.6KV 320A DO205

0

1N3209

1N3209

GeneSiC Semiconductor

DIODE GEN PURP 100V 15A DO5

0

S400QR

S400QR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.2KV DO205AB

0

1N3765

1N3765

GeneSiC Semiconductor

DIODE GEN PURP 700V 35A DO5

0

S70B

S70B

GeneSiC Semiconductor

DIODE GEN PURP 100V 70A DO5

0

MBR8060

MBR8060

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 80A DO5

0

MURH7040

MURH7040

GeneSiC Semiconductor

DIODE GEN PURP 400V 70A D-67

0

S300ZR

S300ZR

GeneSiC Semiconductor

DIODE GEN PURP REV 2KV DO205AB

0

MBR8020R

MBR8020R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 20V DO5

0

GKR240/14

GKR240/14

GeneSiC Semiconductor

DIODE GEN PURP 1.4KV 320A DO205

0

MBR8080

MBR8080

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 80A DO5

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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