Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
CES521,L3F

CES521,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 200MA ESC

24776

BAS516,L3F

BAS516,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 100V 250MA ESC

3857

CUS05F30,H3F

CUS05F30,H3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 500MA USC

2383

1SS370TE85LF

1SS370TE85LF

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 200V 100MA SC70

25

CTS520,L3F

CTS520,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 200MA CST2

108418

1SS322(TE85L,F)

1SS322(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

SMALL-SIGNAL SCHOTTKY BARRIER DI

5100

1SS193,LF

1SS193,LF

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 80V 100MA SMINI

13245

JDH2S02SL,L3F

JDH2S02SL,L3F

Toshiba Electronic Devices and Storage Corporation

X34 HIGH FREQUENCY SCHOTTKY BARR

7509

CRS06(TE85L,Q,M)

CRS06(TE85L,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 20V 1A SFLAT

892

CCS15S30,L3F

CCS15S30,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 20V 1.5A CST2C

1146

CMS04(TE12L,Q,M)

CMS04(TE12L,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 5A MFLAT

66161

1SS387,L3F

1SS387,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 80V 100MA ESC

28

CMS05(TE12L,Q,M)

CMS05(TE12L,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 5A MFLAT

157587

1SS405,H3F

1SS405,H3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 20V 50MA ESC

23716

CUHS20S40,H3F

CUHS20S40,H3F

Toshiba Electronic Devices and Storage Corporation

SCHOTTKY BARRIER DIODE, LOW VF,

4467

CRS01(TE85L,Q,M)

CRS01(TE85L,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 1A SFLAT

36157

1SS307(TE85L,F)

1SS307(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 30V 100MA SMINI

4068

CRH01(TE85L,Q,M)

CRH01(TE85L,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 200V 1A SFLAT

21525

CUHS15S40,H3F

CUHS15S40,H3F

Toshiba Electronic Devices and Storage Corporation

SBD SINGLE 40V, 1.5A, IN 2 PIN U

6000

CUS551V30,H3F

CUS551V30,H3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 500MA USC

33943

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
RFQ BOM Call Skype Email
Top