Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
1SS417CT,L3F

1SS417CT,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 40V 100MA FSC

4087

CUHS15S30,H3F

CUHS15S30,H3F

Toshiba Electronic Devices and Storage Corporation

SBD SINGLE 30V, 1.5A, IN 2 PIN U

0

1SS387CT,L3F

1SS387CT,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 80V 100MA CST2

39297

CLS10F40,L3F

CLS10F40,L3F

Toshiba Electronic Devices and Storage Corporation

SS SCHOTTKY BARRIER DIODE, HIGH-

19852

1SS250(TE85L,F)

1SS250(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 200V 100MA SC59

0

CUS08F30,H3F

CUS08F30,H3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 800MA USC

247004

1SS307E,L3F

1SS307E,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 80V 100MA SC79

50388

1SS424(TPL3,F)

1SS424(TPL3,F)

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 20V 200MA SSM

14419

CTS05S40,L3F

CTS05S40,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 40V 500MA CST2

5252

1SS416,L3M

1SS416,L3M

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 100MA SOD923

5042

1SS190TE85LF

1SS190TE85LF

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 80V 100MA SC59-3

0

1SS413,L3M

1SS413,L3M

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 20V 50MA FSC

27195

CMS11(TE12L,Q,M)

CMS11(TE12L,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 40V 2A MFLAT

2362

CRS04(TE85L,Q,M)

CRS04(TE85L,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 40V 1A SFLAT

13962

CMS01(TE12L,Q,M)

CMS01(TE12L,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 3A MFLAT

8340

1SS427,L3M

1SS427,L3M

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 80V 100MA SOD923

0

CRS20I30A(TE85L,QM

CRS20I30A(TE85L,QM

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 2A SFLAT

0

CMF05(TE12L,Q,M)

CMF05(TE12L,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 1KV 500MA MFLAT

0

CBS10S40,L3F

CBS10S40,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 40V 1A CST2B

0

1SS367,H3F

1SS367,H3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 10V 100MA SC76

20726

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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