Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
1SS394TE85LF

1SS394TE85LF

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 10V 100MA SC59

2091

CMS06(TE12L,Q,M)

CMS06(TE12L,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 2A MFLAT

38311

1SS404,H3F

1SS404,H3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 20V 300MA USC

61143

CUS520,H3F

CUS520,H3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 200MA

171945

CUS15S40,H3F

CUS15S40,H3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 40V 1.5A

556

CRS03(TE85L,Q,M)

CRS03(TE85L,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 1A SFLAT

61047

CMS03(TE12L,Q,M)

CMS03(TE12L,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 3A MFLAT

24646

1SS403,H3F

1SS403,H3F

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 200V 100MA USC

2086

1SS294,LF

1SS294,LF

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 40V 100MA SMINI

0

1SS352,H3F

1SS352,H3F

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 80V 100MA SC76-2

174230

1SS397TE85LF

1SS397TE85LF

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 400V 100MA SC70

2531

CUHS20F30,H3F

CUHS20F30,H3F

Toshiba Electronic Devices and Storage Corporation

SCHOTTKY BARRIER DIODE, 30V/2A,

13391

DSR01S30SL,L3F

DSR01S30SL,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 100MA SL2

3219

1SS187,LF

1SS187,LF

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 80V 100MA S-MINI

0

CUHS20S30,H3F

CUHS20S30,H3F

Toshiba Electronic Devices and Storage Corporation

SCHOTTKY BARRIER DIODE, LOW VF,

6442

CUS15S30,H3F

CUS15S30,H3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 1.5A

1895

1SS422(TE85L,F)

1SS422(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

SMALL-SIGNAL SCHOTTKY BARRIER DI

22746

1SS321,LF

1SS321,LF

Toshiba Electronic Devices and Storage Corporation

SMALL SIGNAL SCHOTTKY BARRIER DI

1

CRG04(TE85L,Q,M)

CRG04(TE85L,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 600V 1A SFLAT

0

TRS10A65F,S1Q

TRS10A65F,S1Q

Toshiba Electronic Devices and Storage Corporation

PB-F DIODE TO-220-2L V=650 IF=10

248

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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