Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
CUHS15F40,H3F

CUHS15F40,H3F

Toshiba Electronic Devices and Storage Corporation

SMALL-SIGNAL SCHOTTKY BARRIER DI

3638

CCS15S40,L3F

CCS15S40,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 40V 1.5A CST2C

18520

TRS8E65F,S1Q

TRS8E65F,S1Q

Toshiba Electronic Devices and Storage Corporation

DODE SCHOTTKY 650V TO220

55

CRF03(TE85L,Q,M)

CRF03(TE85L,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 600V 700MA SFLAT

0

1SS401(TE85L,F)

1SS401(TE85L,F)

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 20V 300MA SC70

2359

TBAT54,LM

TBAT54,LM

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 140MA SOT23

114

DSF01S30SL,L3F

DSF01S30SL,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 100MA SL2

6082

CCS15F40,L3F

CCS15F40,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 40V 1.5A CST2C

4005

CUHS20F40,H3F

CUHS20F40,H3F

Toshiba Electronic Devices and Storage Corporation

SCHOTTKY BARRIER DIODE, 40V/2A,

381

CRS05(TE85L,Q,M)

CRS05(TE85L,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 1A SFLAT

0

CES388,L3F

CES388,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 40V 100MA ESC

1407

CUS10F30,H3F

CUS10F30,H3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 1A USC

2287

CTS521,L3F

CTS521,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 200MA CST2

6964

CMF04(TE12L,Q,M)

CMF04(TE12L,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 800V 500MA MFLAT

3000

CUS10S40,H3F

CUS10S40,H3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 40V 1A USC

0

CBS05F30,L3F

CBS05F30,L3F

Toshiba Electronic Devices and Storage Corporation

X34 PB-F CST2B SBD DIODE VR:30V,

9807

CBS10S30,L3F

CBS10S30,L3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 20V 1A CST2B

0

CRS09(TE85L,Q,M)

CRS09(TE85L,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 1.5A SFLAT

66495

CUS05S30,H3F

CUS05S30,H3F

Toshiba Electronic Devices and Storage Corporation

DIODE SCHOTTKY 30V 500MA USC

1468

CRH01(TE85R,Q,M)

CRH01(TE85R,Q,M)

Toshiba Electronic Devices and Storage Corporation

DIODE GEN PURP 200V 1A SFLAT

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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