Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
R4000F

R4000F

Rectron USA

DIODE GEN PURP 4000V 200MA DO15

0

R3000

R3000

Rectron USA

DIODE GEN PURP 3000V 200A DO15

0

FM4004-W

FM4004-W

Rectron USA

DIODE GEN PURP 400V 1 A SMA

0

R2500F

R2500F

Rectron USA

DIODE GEN PURP 2500V 200MA DO15

0

RL1N1200F

RL1N1200F

Rectron USA

DIODE GEN PURP 1200V 1A A405

0

FM1200W

FM1200W

Rectron USA

DIODE GEN PURP 1200V 500MA SMX

0

FM5822A-W

FM5822A-W

Rectron USA

DIODE SCHOTTKY 3A 40V

14998

R1800

R1800

Rectron USA

DIODE GEN PURP 1800V 1A DO41

0

FM2500W

FM2500W

Rectron USA

DIODE GEN PURP 2500V 150MA SMX

15000

FR302-T

FR302-T

Rectron USA

DIODE FAST 100V 3A DO-201

0

EFM204-W

EFM204-W

Rectron USA

DIODE SUPER FAST 200V 2A SMB

0

FFM201-W

FFM201-W

Rectron USA

DIODE FAST 50V 2A 150NS SMB

0

HFM105W-W

HFM105W-W

Rectron USA

DIODE HIGH EFF 400V 1A SMX

0

1F14

1F14

Rectron USA

DIODE GEN PURP 1400V 500MA R1

0

R4000

R4000

Rectron USA

DIODE GEN PURP 4000V 200A DO15

0

FM302-W

FM302-W

Rectron USA

DIODE GEN PURP GLASS 100V 3A SMC

6000

R1500F

R1500F

Rectron USA

DIODE GEN PURP 1500V 500MA DO41

0

1N4004-F

1N4004-F

Rectron USA

DIODE GEN PU 400V 1A DO-41 AMMO

0

R5000G

R5000G

Rectron USA

DIODE GEN PURP 5000V 200MA DO41

0

EFM102-W

EFM102-W

Rectron USA

DIODE GEN PURP 100V 1A DO-214AC

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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