Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
FR302-B

FR302-B

Rectron USA

DIODE FAST 100V 3A DO-201

4000

RL1N1000F

RL1N1000F

Rectron USA

DIODE GEN PURP 1000V 1A A405

0

R2500

R2500

Rectron USA

DIODE GEN PURP 2500V 200A DO15

0

R2000-T

R2000-T

Rectron USA

DIODE GEN PURP 2KV 1A DO41

0

FFM1600W

FFM1600W

Rectron USA

DIODE GEN PURP 1600V 500MA SMX

0

RL1N1500F

RL1N1500F

Rectron USA

DIODE GEN PURP 1500V 1A A405

0

HVM14

HVM14

Rectron USA

DIODE GEN PURP 14000V 350MA HVM

0

HVP15

HVP15

Rectron USA

DIODE GEN PURP 15000V 750MA HVP

264

R2000F

R2000F

Rectron USA

DIODE GEN PURP 2000V 200MA DO41

5000

R2000G

R2000G

Rectron USA

DIODE GEN PURP 2000V 500MA DO41

0

R8KH

R8KH

Rectron USA

DIODE GEN PURP 8700V 380MA AXIAL

0

RL155

RL155

Rectron USA

DIODE GEN PURP 1000V 1.5A DO-15

0

RL1N4004G

RL1N4004G

Rectron USA

DIODE GLASS 1A 400V A-405

0

1A2

1A2

Rectron USA

DIODE GEN PURP 1000V 1A R-1

0

FM304

FM304

Rectron USA

DIODE GP GLASS 3A 400V SMC

0

FM205

FM205

Rectron USA

DIODE GEN GLASS 2A 600V SMB

0

FM305

FM305

Rectron USA

DIODE GP GLASS 3A 600V SMC

0

10A1

10A1

Rectron USA

DIODE GEN PURP 1000V 10A R-6

0

RL154G

RL154G

Rectron USA

DIODE GP GLASS 400V 1.5A DO-15

0

FM507B

FM507B

Rectron USA

DIODE GEN GLASS 2A 1000V SMB

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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