Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
HVP8

HVP8

Rectron USA

DIODE GEN PURP 8000V 750MA HVP

0

FM1500W

FM1500W

Rectron USA

DIODE GEN PURP 1500V 500MA SMX

0

FR106-T

FR106-T

Rectron USA

DIODE FAST 800V 1A DO-41

0

FM4004W-W

FM4004W-W

Rectron USA

DIODE STANDARD RECOVERY 400V 1 A

90000

HVM15

HVM15

Rectron USA

DIODE GEN PURP 15000V 350MA HVM

0

R3000F-B

R3000F-B

Rectron USA

DIODE GEN PURP FAST 3KV 1A DO41

0

1F18

1F18

Rectron USA

DIODE GEN PURP 1800V 500MA R1

0

FFM1500W

FFM1500W

Rectron USA

DIODE GEN PURP 1500V 500MA SMX

0

FM1800W

FM1800W

Rectron USA

DIODE GEN PURP 1800V 500MA SMX

0

R3000F

R3000F

Rectron USA

DIODE GEN PURP 3000V 200MA DO15

4000

1N5406-F

1N5406-F

Rectron USA

DIODE GEN PURP 600V 3A DO-201AD

0

1S40-T

1S40-T

Rectron USA

DIODE SCHOKKTY 40V 1A R-1

0

R1800F

R1800F

Rectron USA

DIODE GEN PURP 1800V 500MA DO41

0

FFM104W-W

FFM104W-W

Rectron USA

FAST RECOVERY DIODE 400V 1A

0

HVP14

HVP14

Rectron USA

DIODE GEN PURP 14000V 750MA HVP

0

FFM1400W

FFM1400W

Rectron USA

DIODE GEN PURP 1400V 500MA SMX

0

HVP10

HVP10

Rectron USA

DIODE HV ASSEMBLIED 10KV .75A

0

FFM1200W

FFM1200W

Rectron USA

DIODE GEN PURP 1200V 500MA SMX

0

HVP5

HVP5

Rectron USA

DIODE GEN PURP 5000V 750MA HVP

0

HVM12

HVM12

Rectron USA

DIODE GEN PURP 12000V 350MA HVM

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
RFQ BOM Call Skype Email
Top