Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
10A6-T

10A6-T

Rectron USA

DIODE GEN PURP 600V 6A R-6

0

3SSL60L-W

3SSL60L-W

Rectron USA

DIODE SCHOTTKY 3A 60V LOW VF

0

HFM103W-W

HFM103W-W

Rectron USA

DIODE FAST RECOVERY 200V 1A

0

RL1N1400F

RL1N1400F

Rectron USA

DIODE GEN PURP 1400V 1A A405

0

R2000F-T

R2000F-T

Rectron USA

DIODE GEN PURP FAST 2KV 1A DO41

0

LL4148-T

LL4148-T

Rectron USA

DIODE GEN PURP 100V 200MA LL34

0

HER305-T

HER305-T

Rectron USA

DIODE HIGH EFF 600V 3A DO-201

0

1F10

1F10

Rectron USA

DIODE GEN PURP 1000V 500MA R1

0

FM4001W-W

FM4001W-W

Rectron USA

DIODE GEN PURP 50V 1 A SMX

7500

HER508-F

HER508-F

Rectron USA

DIODE HIGH EFF 1000V 5A DO-201

0

6A6-T

6A6-T

Rectron USA

DIODE GEN PURP 600V 6A R-6

0

HVM8

HVM8

Rectron USA

DIODE GEN PURP 8000V 350MA HVM

0

1F16

1F16

Rectron USA

DIODE GEN PURP 1600V 500MA R1

0

HVP16

HVP16

Rectron USA

DIODE GEN PURP 16000V 750MA HVP

0

RL1N1800F

RL1N1800F

Rectron USA

DIODE GEN PURP 1800V 1A A405

0

R4000G

R4000G

Rectron USA

DIODE GEN PURP 4000V 200MA DO41

0

FM2000W

FM2000W

Rectron USA

DIODE GEN PURP 2000V 1A DO214AC

0

HVP12

HVP12

Rectron USA

DIODE GEN PURP 12000V 750MA HVP

0

FM4006-W

FM4006-W

Rectron USA

DIODE GEN PURP 800V 1 A SMA

0

R1200F

R1200F

Rectron USA

DIODE GEN PURP 1200V 500MA DO41

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
RFQ BOM Call Skype Email
Top