Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
R7010205XXUA

R7010205XXUA

Powerex, Inc.

DIODE GEN PURP 200V 550A DO200AA

0

RBK83240XX

RBK83240XX

Powerex, Inc.

DIODE GEN PURP 3.2KV 4000A

0

R7S01612XX

R7S01612XX

Powerex, Inc.

DIODE GP 1.6KV 1200A DO200AA R62

0

R5011215XXWA

R5011215XXWA

Powerex, Inc.

DIODE GEN PURP 1.2KV 150A DO205

0

1N3742R

1N3742R

Powerex, Inc.

RECTIFIER STUD MOUNT DO-9

0

1N3262

1N3262

Powerex, Inc.

DIODE GEN PURP 150V 160A DO205AB

0

RBT83643XXOO

RBT83643XXOO

Powerex, Inc.

RECTIFIER DISC RBT

0

1N3268

1N3268

Powerex, Inc.

DIODE GEN PURP 500V 160A DO205AB

0

1N3164

1N3164

Powerex, Inc.

DIODE STUD MNT 240A 200V DO-9

0

R7220607CSOO

R7220607CSOO

Powerex, Inc.

DIODE GEN PURP 600V 700A DO200AB

0

RA204220XX

RA204220XX

Powerex, Inc.

DIODE GP 4.2KV 2000A POWRDISC

0

R5021218FSWA

R5021218FSWA

Powerex, Inc.

DIODE GEN PURP 1.2KV 175A DO205

0

1N3737R

1N3737R

Powerex, Inc.

RECTIFIER STUD MOUNT DO-9

0

R7202006XXOO

R7202006XXOO

Powerex, Inc.

DIODE GEN PURP 2KV 600A DO200AB

0

R7004003XXUA

R7004003XXUA

Powerex, Inc.

DIODE GEN PURP 4KV 300A DO200

0

RA204420XX

RA204420XX

Powerex, Inc.

DIODE GP 4.4KV 2000A POWRDISC

0

R6000425XXYA

R6000425XXYA

Powerex, Inc.

RECTIFIER STUD MOUNT FORWARD DO-

0

R7001203XXUA

R7001203XXUA

Powerex, Inc.

DIODE GEN PURP 1.2KV 300A DO200

0

A190PD

A190PD

Powerex, Inc.

DIODE GEN PURP 1.4KV 250A DO205

0

R5030613LSWA

R5030613LSWA

Powerex, Inc.

DIODE GEN PURP 600V 125A DO205AA

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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