Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
R6012030XXYA

R6012030XXYA

Powerex, Inc.

DIODE GEN PURP 2KV 300A DO205

0

R7010404XXUA

R7010404XXUA

Powerex, Inc.

DIODE GEN PURP 400V 450A DO200AA

0

1N4054R

1N4054R

Powerex, Inc.

DIODE GEN PURP 800V 275A DO205AB

0

R6020425HSYA

R6020425HSYA

Powerex, Inc.

DIODE GEN PURP 400V 250A DO205AB

0

R7222005ASOO

R7222005ASOO

Powerex, Inc.

DIODE GEN PURP 2KV 500A DO200AB

0

A177RM

A177RM

Powerex, Inc.

DIODE GEN PURP 600V 100A DO205AA

0

R7012003XXUA

R7012003XXUA

Powerex, Inc.

DIODE GEN PURP 2KV 300A DO200

0

1N3742

1N3742

Powerex, Inc.

RECTIFIER STUD MOUNT DO-9

0

R7S01016XX

R7S01016XX

Powerex, Inc.

DIODE GP 1KV 1600A DO200AA R62

0

PS411625

PS411625

Powerex, Inc.

DIODE GP 1.6KV 2500A POWRBLOK

0

A177RPB

A177RPB

Powerex, Inc.

DIODE GEN PURP REV 1.2KV DO205AA

0

A170RPB

A170RPB

Powerex, Inc.

DIODE GEN PURP 1.2KV 100A DO205

0

A187N

A187N

Powerex, Inc.

DIODE GEN PURP 800V 150A DO205AA

0

R9G01812XX

R9G01812XX

Powerex, Inc.

DIODE GP 1.8KV 1200A DO200AB

0

A177P

A177P

Powerex, Inc.

DIODE GEN PURP 1KV 100A DO205

0

R7222507ASOO

R7222507ASOO

Powerex, Inc.

DIODE GP 2.5KV 700A DO200AB

0

1N3272

1N3272

Powerex, Inc.

DIODE GEN PURP 900V 160A DO205AB

0

RBK82440XX

RBK82440XX

Powerex, Inc.

DIODE GEN PURP 2.4KV 4000A

0

1N3740

1N3740

Powerex, Inc.

RECTIFIER STUD MOUNT DO-9

0

R6020622PSYA

R6020622PSYA

Powerex, Inc.

DIODE GEN PURP 600V 220A DO205AB

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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