Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
A170RB

A170RB

Powerex, Inc.

DIODE GEN PURP 200V 100A DO205AA

0

1N4046R

1N4046R

Powerex, Inc.

DIODE GEN PURP 150V 275A DO205AB

0

R6010825XXYA

R6010825XXYA

Powerex, Inc.

RECTIFIER STUD MOUNT REVERSE DO-

0

R7221608ASOO

R7221608ASOO

Powerex, Inc.

DIODE GP 1.6KV 800A DO200AB

0

RBS80270XX

RBS80270XX

Powerex, Inc.

DIODE GEN PURP 200V 7000A

0

RA203225XX

RA203225XX

Powerex, Inc.

DIODE GP 3.2KV 2500A POWRDISC

0

R7221405ESOO

R7221405ESOO

Powerex, Inc.

DIODE GP 1.4KV 500A DO200AB

0

R7002803XXUA

R7002803XXUA

Powerex, Inc.

DIODE GEN PURP 2.8KV 300A DO200

0

R7000605XXUA

R7000605XXUA

Powerex, Inc.

DIODE GEN PURP 600V 550A DO200AA

0

R7222207CSOO

R7222207CSOO

Powerex, Inc.

DIODE GP 2.2KV 700A DO200AB

0

R7013203XXUA

R7013203XXUA

Powerex, Inc.

DIODE GEN PURP 3.2KV 300A DO200

0

R6202040XXOO

R6202040XXOO

Powerex, Inc.

DIODE GP 2KV 400A DO200AA R62

0

R7204006XXOO

R7204006XXOO

Powerex, Inc.

DIODE GP 4KV 600A DO200AA R62

0

R6220630PSOO

R6220630PSOO

Powerex, Inc.

DIODE GP 600V 300A DO200AA R62

0

R7011203XXUA

R7011203XXUA

Powerex, Inc.

DIODE GEN PURP 1.2KV 300A DO200

0

A180PB

A180PB

Powerex, Inc.

DIODE GEN PURP 1.2KV 150A DO205

0

R7S00408XX

R7S00408XX

Powerex, Inc.

DIODE GP 400V 800A DO200AA R62

0

A397N

A397N

Powerex, Inc.

DIODE GEN PURP 800V 400A DO200AA

0

A330M

A330M

Powerex, Inc.

DIODE GEN PURP 600V 1200A DO200

0

RA201636XX

RA201636XX

Powerex, Inc.

DIODE GP 1.6KV 3600A POWRDISC

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
RFQ BOM Call Skype Email
Top