Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
R7221207CSOO

R7221207CSOO

Powerex, Inc.

DIODE GP 1.2KV 700A DO200AB

0

R6031435ESYA

R6031435ESYA

Powerex, Inc.

DIODE GEN PURP 1.4KV 350A DO205

0

R7S01616XX

R7S01616XX

Powerex, Inc.

RECTIFIER DISC R7S

0

R6030425HSYA

R6030425HSYA

Powerex, Inc.

DIODE GEN PURP 400V 250A DO205AB

0

R6010630XXYA

R6010630XXYA

Powerex, Inc.

RECTIFIER STUD MOUNT REVERSE DO-

0

R6202430XXOO

R6202430XXOO

Powerex, Inc.

DIODE GP 2.4KV 300A DO200AA R62

0

R7000403XXUA

R7000403XXUA

Powerex, Inc.

DIODE GEN PURP 400V 300A DO200AA

0

R7200812XXOO

R7200812XXOO

Powerex, Inc.

DIODE GP 800V 1200A DO200AB

0

R7200612XXOO

R7200612XXOO

Powerex, Inc.

DIODE GP 600V 1200A DO200AB

0

1N3169

1N3169

Powerex, Inc.

DIODE STUD MNT 240A 500V DO-9

0

A397M

A397M

Powerex, Inc.

DIODE GEN PURP 600V 400A DO200AA

0

1N4048

1N4048

Powerex, Inc.

DIODE GEN PURP 250V 275A DO205AB

0

A197B

A197B

Powerex, Inc.

DIODE GEN PURP 200V 250A DO205AB

0

A399P

A399P

Powerex, Inc.

DIODE FAST 400A 1000V DO-200AA

0

R6000225XXYA

R6000225XXYA

Powerex, Inc.

RECTIFIER STUD MOUNT FORWARD DO-

0

R5031213LSWA

R5031213LSWA

Powerex, Inc.

DIODE GEN PURP 1.2KV 125A DO205

0

R6200250XXOO

R6200250XXOO

Powerex, Inc.

DIODE GP 200V 500A DO200AA R62

0

R6221255ESOO

R6221255ESOO

Powerex, Inc.

DIODE GP 1.2KV 550A DO200AA R62

0

R6011825XXYA

R6011825XXYA

Powerex, Inc.

DIODE GEN PURP 1.8KV 250A DO205

0

R6030222PSYA

R6030222PSYA

Powerex, Inc.

DIODE GEN PURP 200V 220A DO205AB

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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