Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
R6012225XXYA

R6012225XXYA

Powerex, Inc.

DIODE GEN PURP 2.2KV 250A DO205

0

A399PB

A399PB

Powerex, Inc.

DIODE FAST 400A 1200V DO-200AA

0

A330PB

A330PB

Powerex, Inc.

DIODE GEN PURP 1.2KV 1200A DO200

0

A180P

A180P

Powerex, Inc.

DIODE GEN PURP 1KV 150A DO205

0

R7011803XXUA

R7011803XXUA

Powerex, Inc.

DIODE GEN PURP 1.8KV 300A DO200

0

R6011230XXYA

R6011230XXYA

Powerex, Inc.

DIODE GEN PURP 1.2KV 300A DO205

0

A190D

A190D

Powerex, Inc.

DIODE GEN PURP 400V 250A DO205AA

0

R6021025HSYA

R6021025HSYA

Powerex, Inc.

DIODE GEN PURP 1KV 250A DO205

0

1N3162R

1N3162R

Powerex, Inc.

DIODE STUD MNT 240A 100V DO-9

0

R5021213LSWA

R5021213LSWA

Powerex, Inc.

DIODE GEN PURP 1.2KV 125A DO205

0

R7S01412XX

R7S01412XX

Powerex, Inc.

DIODE GP 1.4KV 1200A DO200AA R62

0

R7S01816XX

R7S01816XX

Powerex, Inc.

RECTIFIER DISC R7S

0

R6012425XXYA

R6012425XXYA

Powerex, Inc.

DIODE GEN PURP 2.4KV 250A DO205

0

R9G00618XX

R9G00618XX

Powerex, Inc.

DIODE GP 600V 1800A DO200AB

0

A437N

A437N

Powerex, Inc.

DIODE GEN PURP 800V 600A DO200AB

0

R7000404XXUA

R7000404XXUA

Powerex, Inc.

DIODE GEN PURP 400V 450A DO200AA

0

R7S00412XX

R7S00412XX

Powerex, Inc.

DIODE GP 400V 1200A DO200AA R62

0

RA202220XX

RA202220XX

Powerex, Inc.

DIODE GP 2.2KV 2000A POWRDISC

0

R6030622PSYA

R6030622PSYA

Powerex, Inc.

DIODE GEN PURP 600V 220A DO205AB

0

RA201836XX

RA201836XX

Powerex, Inc.

DIODE GP 1.8KV 3600A POWRDISC

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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