Diodes - Rectifiers - Single

Image Part Number Description / PDF Quantity Rfq
R7010604XXUA

R7010604XXUA

Powerex, Inc.

DIODE GEN PURP 600V 450A DO200AA

0

1N3290A

1N3290A

Powerex, Inc.

DIODE GEN PURP 300V 100A DO205AA

0

A170RM

A170RM

Powerex, Inc.

DIODE GEN PURP 600V 100A DO205AA

0

R9G03212XX

R9G03212XX

Powerex, Inc.

DIODE GP 3.2KV 1200A DO200AA R62

0

R7S01808XX

R7S01808XX

Powerex, Inc.

DIODE GP 1.8KV 800A DO200AA R62

0

PS415014

PS415014

Powerex, Inc.

DIODE MODULE SINGLE

0

1N3290AR

1N3290AR

Powerex, Inc.

DIODE GEN PURP 300V 100A DO205AA

0

1N3735R

1N3735R

Powerex, Inc.

RECTIFIER STUD MOUNT DO-9

0

R5011210XXWA

R5011210XXWA

Powerex, Inc.

DIODE GEN PURP 1.2KV 100A DO205

0

R7220608ESOO

R7220608ESOO

Powerex, Inc.

DIODE GEN PURP 600V 800A DO200AB

0

R7012803XXUA

R7012803XXUA

Powerex, Inc.

DIODE GEN PURP 2.8KV 300A DO200

0

A397B

A397B

Powerex, Inc.

DIODE GEN PURP 200V 400A DO200AA

0

R6020835ESYA

R6020835ESYA

Powerex, Inc.

DIODE GEN PURP 800V 350A DO205AB

0

R6031025HSYA

R6031025HSYA

Powerex, Inc.

DIODE GEN PURP 1KV 250A DO205

0

1N4052

1N4052

Powerex, Inc.

DIODE GEN PURP 600V 275A DO205AB

0

A451PM

A451PM

Powerex, Inc.

DIODE GP 1.6KV 2500A DO200AC

0

1N3744R

1N3744R

Powerex, Inc.

DIODE GEN PURP 1.4KV 250A DO205

0

R7220208ESOO

R7220208ESOO

Powerex, Inc.

DIODE GEN PURP 200V 800A DO200AB

0

R7221007CSOO

R7221007CSOO

Powerex, Inc.

DIODE GEN PURP 1KV 700A DO200AB

0

1N3744

1N3744

Powerex, Inc.

DIODE GEN PURP 1.4KV 250A DO205

0

Diodes - Rectifiers - Single

1. Overview

Single rectifier diodes are two-terminal semiconductor devices that allow current to flow in one direction while blocking reverse current. As fundamental components in power electronics, they convert alternating current (AC) to direct current (DC) through rectification. These discrete components are critical in power supply circuits, motor drives, and voltage regulation systems, enabling efficient energy conversion in industrial, automotive, and consumer electronics applications.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsTypical Applications
Silicon DiodesHigh thermal stability, 0.7V forward voltage dropGeneral-purpose rectifiers in power supplies
Germanium DiodesLow forward voltage (0.3V), lower efficiencyLow-voltage signal rectification
Schottky DiodesLow VF (0.2-0.4V), fast switchingHigh-frequency converters, clamping circuits
Fast Recovery DiodesReverse recovery time <50nsSwitching power supplies, inverters
Avalanche DiodesPrecise reverse breakdown voltageVoltage reference circuits

3. Structure and Composition

Single rectifier diodes typically consist of:

  • Doped semiconductor materials (silicon/germanium) forming P-N junction
  • Metallurgical contacts with molybdenum/silver alloys
  • Encapsulation in plastic/ceramic packages (DO-41, TO-220, SMD)
  • Lead materials: Tin-plated copper or alloy 42
The junction structure determines current handling capability and switching characteristics, with modern designs incorporating guard rings and surface passivation layers to enhance performance.

4. Key Technical Specifications

ParameterDescriptionImportance
Max Forward Current (IFM)1A-200A rangeDetermines power handling capacity
Reverse Breakdown Voltage (VR)50V-1500V rangePrevents damage from voltage spikes
Forward Voltage Drop (VF)0.3V-1.5VImpacts conduction losses
Reverse Recovery Time (trr)10ns-5 sSwitching performance indicator
Thermal Resistance (R JC)1-50 C/WDictates cooling requirements

5. Application Fields

Key industries utilizing single rectifiers:

  • Power electronics: Switching power supplies, battery chargers
  • Automotive: Alternator rectifier modules, on-board chargers
  • Renewables: Solar inverters, wind turbine converters
  • Industrial: Variable frequency drives, welding machines
  • Consumer: Mobile device adapters, LED drivers

6. Leading Manufacturers and Products

ManufacturerProduct SeriesKey Specifications
ON SemiconductorMUR156015A, 600V, 35ns trr
STMicroelectronicsSTTH1R06A1A, 600V, 50ns trr
InfineonDDTH10006TPL10A, 600V, Schottky type
Diodes Inc.1N58191A, 40V, 10ns trr

7. Selection Guidelines

Design engineers should consider:

  • Current/voltage ratings with 20% safety margin
  • Switching frequency requirements
  • Operating temperature range
  • Package type (through-hole vs SMD)
  • Cost vs performance trade-offs

Example: For a 1200W server power supply, select a diode with 35A IFM, 600V VR rating, and trr <100ns to ensure reliable operation at 100kHz switching frequency.

8. Industry Trends

Future developments include:

  • Wide bandgap (SiC/GaN) diodes enabling higher efficiency
  • Miniaturization through advanced packaging technologies
  • Integration with protection circuits (TVS, current limiting)
  • Automotive-grade devices for 800V EV systems
  • Improved reliability for harsh environments (IP67 ratings)
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