Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
FST50100E3

FST50100E3

Microsemi

DIODE ARRAY SCHOTTKY 100V TO247

0

APT2X51DC60J

APT2X51DC60J

Microsemi

DIODE MODULE 600V 50A SOT227

0

APT60D30LCTG

APT60D30LCTG

Microsemi

DIODE ARRAY GP 300V 60A TO264

0

CPT40145

CPT40145

Microsemi

DIODE MODULE 45V 200A MD3CC

0

UFT40020

UFT40020

Microsemi

DIODE MODULE 200V 200A

0

FST31180E3

FST31180E3

Microsemi

DIODE ARRAY SCHOTTKY 180V TO220

0

UFT14260A

UFT14260A

Microsemi

DIODE MODULE 600V 70A TO249

0

FST153100D

FST153100D

Microsemi

DIODE MODULE 100V TO249

0

UFT14140A

UFT14140A

Microsemi

DIODE MODULE 400V 70A TO249

0

APT15S20BCTG

APT15S20BCTG

Microsemi

DIODE ARRAY SCHOTTKY 200V TO247

0

MSCD100-16

MSCD100-16

Microsemi

DIODE MODULE 1.6KV 100A D1

0

MSCD36-16

MSCD36-16

Microsemi

DIODE MODULE 1.6KV 36A D1

0

MSKD60-12

MSKD60-12

Microsemi

DIODE MODULE 1.2KV 60A D1

0

APT15S20KCTG

APT15S20KCTG

Microsemi

DIODE ARRAY SCHOTTKY 200V TO220

0

UFT7260SM5D

UFT7260SM5D

Microsemi

DIODE MODULE 600V 35A SM5

0

MSKD100-16

MSKD100-16

Microsemi

DIODE MODULE 1.6KV 100A D1

0

CPT60035

CPT60035

Microsemi

DIODE MODULE 35V 300A TO244AB

0

MSKD200-12

MSKD200-12

Microsemi

DIODE MODULE 1.2KV 200A SD2

0

FST80100D

FST80100D

Microsemi

DIODE MODULE 100V TO249

0

CPT40090

CPT40090

Microsemi

DIODE MODULE 90V 200A TO244AB

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top