Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MSKD36-16

MSKD36-16

Microsemi

DIODE MODULE 1.6KV 36A D1

0

D16-4150E3/TU

D16-4150E3/TU

Microsemi

DIODE ARRAY GP 75V 16DIP

0

FST60100A

FST60100A

Microsemi

DIODE MODULE 100V TO249

0

MSKD200-16

MSKD200-16

Microsemi

DIODE MODULE 1.6KV 200A SD2

0

FST20150E3

FST20150E3

Microsemi

DIODE ARRAY SCHOTTKY 150V TO220

0

MAD1106E3/TU

MAD1106E3/TU

Microsemi

DIODE ARRAY 400MA 90V 14DIP

0

APT2X31DC120J

APT2X31DC120J

Microsemi

DIODE MODULE 1.2KV 30A SOT227

0

APT2X40DC60J

APT2X40DC60J

Microsemi

DIODE MODULE 600V 40A SOT227

0

FST16050

FST16050

Microsemi

DIODE MODULE 50V 80A TO249

0

MSAD200-16

MSAD200-16

Microsemi

DIODE MODULE 1.6KV 200A SD2

0

UFT14280A

UFT14280A

Microsemi

DIODE MODULE 800V 70A TO249

0

FST80150SM5C

FST80150SM5C

Microsemi

DIODE MODULE 150V 40A 3MINIMOD

0

FST16145D

FST16145D

Microsemi

DIODE MODULE 45V TO249

0

MSCD200-08

MSCD200-08

Microsemi

DIODE MODULE 800V 200A SD2

0

MSCD60-08

MSCD60-08

Microsemi

DIODE MODULE 800V 60A D1

0

CPT400100A

CPT400100A

Microsemi

DIODE MODULE 100V 200A TO244AB

0

MSAD120-16

MSAD120-16

Microsemi

DIODE ARRAY GP 1600V 120A D1

0

UFT14260

UFT14260

Microsemi

DIODE MODULE 600V 70A TO249

0

APT15D120BCTG

APT15D120BCTG

Microsemi

DIODE ARRAY GP 1200V 15A TO247

0

APT40DQ120BCTG

APT40DQ120BCTG

Microsemi

DIODE ARRAY GP 1200V 40A TO247

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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