Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
CPT30040

CPT30040

Microsemi

DIODE MODULE 40V 150A TO244AB

0

APT2X60DC60J

APT2X60DC60J

Microsemi

DIODE MODULE 600V 60A SOT227

0

CPT600100

CPT600100

Microsemi

DIODE MODULE 100V 300A 2TOWER

0

1N6660

1N6660

Microsemi

DIODE ARRAY SCHOTTKY 45V TO254AA

0

APT2X30DC120J

APT2X30DC120J

Microsemi

DIODE MODULE 1.2KV 30A SOT227

0

MSCD200-16

MSCD200-16

Microsemi

DIODE MODULE 1.6KV 200A SD2

0

UFT20020

UFT20020

Microsemi

DIODE MODULE 200V 100A

0

FST16090D

FST16090D

Microsemi

DIODE MODULE 90V TO249

0

MSKD36-08

MSKD36-08

Microsemi

DIODE MODULE 800V 36A D1

0

UFT14260D

UFT14260D

Microsemi

DIODE MODULE 600V 70A TO249

0

CPT30045

CPT30045

Microsemi

DIODE MODULE 45V 150A 2TOWER

0

APT2X20DC120J

APT2X20DC120J

Microsemi

DIODE MODULE 1.2KV 20A SOT227

0

FST16230

FST16230

Microsemi

DIODE MODULE 30V TO249

0

FST16090

FST16090

Microsemi

DIODE MODULE 90V 80A TO249

0

MSCD120-16

MSCD120-16

Microsemi

DIODE MODULE 1.6KV 120A D1

0

CPT500100

CPT500100

Microsemi

DIODE MODULE 100V 250A TO244AB

0

MSKD120-08

MSKD120-08

Microsemi

DIODE MODULE 800V 120A D1

0

CPT30060

CPT30060

Microsemi

DIODE MODULE 60V 150A 2TOWER

0

MSCD165-12

MSCD165-12

Microsemi

DIODE MODULE 1.2KV 165A SD2

0

UFT14020A

UFT14020A

Microsemi

DIODE MODULE 200V 70A

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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