Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MSCD70-08

MSCD70-08

Microsemi

DIODE MODULE 800V 70A D1

0

UFT14280

UFT14280

Microsemi

DIODE MODULE 800V 70A TO249

0

CPT60045

CPT60045

Microsemi

DIODE MODULE 45V 300A TO244AB

0

APT2X50DC120J

APT2X50DC120J

Microsemi

DIODE MODULE 1.2KV 50A SOT227

0

CPT400100

CPT400100

Microsemi

DIODE MODULE 100V 200A 2TOWER

0

MSKD200-08

MSKD200-08

Microsemi

DIODE MODULE 800V 200A SD2

0

FST16045D

FST16045D

Microsemi

DIODE MODULE 45V TO249

0

MSKD165-16

MSKD165-16

Microsemi

DIODE MODULE 1.6KV 165A SD2

0

MSCD100-08

MSCD100-08

Microsemi

DIODE MODULE 800V 100A D1

0

MSCD165-08

MSCD165-08

Microsemi

DIODE MODULE 800V 165A SD2

0

FST16050D

FST16050D

Microsemi

DIODE MODULE 50V TO249

0

CPT600150D

CPT600150D

Microsemi

DIODE MODULE 150V 300A 2TOWER

0

CPT400100D

CPT400100D

Microsemi

DIODE MODULE 100V 200A TO244AB

0

MSCD36-12

MSCD36-12

Microsemi

DIODE MODULE 1.2KV 36A D1

0

MSAD100-16

MSAD100-16

Microsemi

DIODE MODULE 1.6KV 100A D1

0

MSKD100-08

MSKD100-08

Microsemi

DIODE MODULE 800V 100A D1

0

UFT7260SM5C

UFT7260SM5C

Microsemi

DIODE MODULE 600V 35A

0

SPB10045E3

SPB10045E3

Microsemi

DIODE MODULE 45V 100A SOT227

0

CPT60035D

CPT60035D

Microsemi

DIODE MODULE 35V TO244AB

0

CPT60045A

CPT60045A

Microsemi

DIODE MODULE 45V 300A TO244AB

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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