Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
FST8360SM

FST8360SM

GeneSiC Semiconductor

DIODE MODULE 60V 80A D61-3SM

0

MURF40020R

MURF40020R

GeneSiC Semiconductor

DIODE GEN PURP 200V 200A TO244

0

MURF40010

MURF40010

GeneSiC Semiconductor

DIODE GEN PURP 100V 200A TO244

0

MBR30040CTL

MBR30040CTL

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 150A 2 TOWER

0

MURF10020

MURF10020

GeneSiC Semiconductor

DIODE MODULE 200V 100A TO244

0

FST83100SM

FST83100SM

GeneSiC Semiconductor

DIODE MODULE 100V 80A D61-3SM

0

MURF10010R

MURF10010R

GeneSiC Semiconductor

DIODE MODULE 100V 100A TO244

0

MUR10060CTR

MUR10060CTR

GeneSiC Semiconductor

DIODE MODULE 600V 100A 2TOWER

0

MURF20005

MURF20005

GeneSiC Semiconductor

DIODE MODULE 50V 200A TO244

0

FST8320SM

FST8320SM

GeneSiC Semiconductor

DIODE MODULE 20V 80A D61-3SM

0

FST8380SM

FST8380SM

GeneSiC Semiconductor

DIODE MODULE 80V 80A D61-3SM

0

MURF30005R

MURF30005R

GeneSiC Semiconductor

DIODE GEN PURP 50V 150A TO244

0

MURF30040R

MURF30040R

GeneSiC Semiconductor

DIODE GEN PURP 400V 150A TO244

0

MURF40040R

MURF40040R

GeneSiC Semiconductor

DIODE GEN PURP 400V 200A TO244

0

MUR10005CTR

MUR10005CTR

GeneSiC Semiconductor

DIODE MODULE 50V 100A 2TOWER

0

MURF40005

MURF40005

GeneSiC Semiconductor

DIODE GEN PURP 50V 200A TO244

0

MURF10005R

MURF10005R

GeneSiC Semiconductor

DIODE MODULE 50V 100A TO244

0

MURF30020R

MURF30020R

GeneSiC Semiconductor

DIODE GEN PURP 200V 150A TO244

0

FST8340SM

FST8340SM

GeneSiC Semiconductor

DIODE MODULE 40V 80A D61-3SM

0

FST8330SM

FST8330SM

GeneSiC Semiconductor

DIODE MODULE 30V 80A D61-3SM

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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