Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBRF30030R

MBRF30030R

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 150A TO244AB

0

MBRF20035

MBRF20035

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 100A TO244AB

0

MBR50045CTR

MBR50045CTR

GeneSiC Semiconductor

DIODE MODULE 45V 500A 2TOWER

0

MBRF500200R

MBRF500200R

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 250A TO244AB

0

MBRF60060R

MBRF60060R

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 300A TO244AB

0

MBRF12035R

MBRF12035R

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 60A TO244AB

0

MBRTA80030R

MBRTA80030R

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 400A 3TOWER

0

FST16045L

FST16045L

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 80A TO249AB

0

FST6380M

FST6380M

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 30A D61-3M

0

MBRF12060R

MBRF12060R

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 60A TO244AB

0

MBRTA50035

MBRTA50035

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 250A 3TOWER

0

MBRTA60045RL

MBRTA60045RL

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 300A 3TOWER

0

MBRF12040

MBRF12040

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 60A TO244AB

0

MBRTA60020R

MBRTA60020R

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 300A 3TOWER

0

MURT40005R

MURT40005R

GeneSiC Semiconductor

DIODE MODULE 50V 400A 3TOWER

0

UFT7340M

UFT7340M

GeneSiC Semiconductor

DIODE GEN PURP 400V 70A D61-3M

0

MBRTA500150

MBRTA500150

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 250A 3TOWER

0

MBRF12080R

MBRF12080R

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 60A TO244AB

0

MBR500100CT

MBR500100CT

GeneSiC Semiconductor

DIODE MODULE 100V 500A 2TOWER

0

MBRTA80035

MBRTA80035

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 400A 3TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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