Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MURT10020

MURT10020

GeneSiC Semiconductor

DIODE ARRAY GP 200V 100A 3TOWER

0

MBRF30080

MBRF30080

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 150A TO244AB

0

MBRTA800100R

MBRTA800100R

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 400A 3TOWER

0

MURT10010R

MURT10010R

GeneSiC Semiconductor

DIODE MODULE 100V 100A 3TOWER

0

MBRF60045R

MBRF60045R

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 300A TO244AB

0

MBR50060CT

MBR50060CT

GeneSiC Semiconductor

DIODE MODULE 600V 500A 2TOWER

0

MBRT60045L

MBRT60045L

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 300A 3 TOWER

0

MBRF20035R

MBRF20035R

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 100A TO244AB

0

FST16030L

FST16030L

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 80A TO249AB

0

MBRTA800150R

MBRTA800150R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 400A 3TOWER

0

MBRF20045

MBRF20045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 100A TO244AB

0

MBRF300100R

MBRF300100R

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 150A TO244AB

0

MBRTA60080

MBRTA60080

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 300A 3TOWER

0

MBRTA80040L

MBRTA80040L

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 400A 3TOWER

0

MBRF40080

MBRF40080

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 200A TO244AB

0

UFT10005

UFT10005

GeneSiC Semiconductor

DIODE GEN PURP 50V 50A TO249AB

0

MBRF500100R

MBRF500100R

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 250A TO244AB

0

MBRF60035

MBRF60035

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 300A TO244AB

0

MBR50040CT

MBR50040CT

GeneSiC Semiconductor

DIODE MODULE 40V 500A 2TOWER

0

MBRT50060

MBRT50060

GeneSiC Semiconductor

DIODE MODULE 60V 500A 3TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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