Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBRTA40020L

MBRTA40020L

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 200A 3TOWER

0

MBR50080CT

MBR50080CT

GeneSiC Semiconductor

DIODE MODULE 80V 500A 2TOWER

0

MBRF40040R

MBRF40040R

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 200A TO244AB

0

MBRF50060

MBRF50060

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 250A TO244AB

0

MBR40035CTRL

MBR40035CTRL

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 200A 2 TOWER

0

MBRF12040R

MBRF12040R

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 60A TO244AB

0

MBR30030CTRL

MBR30030CTRL

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 150A 2 TOWER

0

MBRF40030R

MBRF40030R

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 200A TO244AB

0

MBRTA80045R

MBRTA80045R

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 400A 3TOWER

0

MBRTA60020RL

MBRTA60020RL

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 300A 3TOWER

0

MBRF120100R

MBRF120100R

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 60A TO244AB

0

MBRTA50060

MBRTA50060

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 250A 3TOWER

0

MBRT500150

MBRT500150

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 250A 3 TOWER

0

MBRF40060

MBRF40060

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 200A TO244AB

0

MBRTA80045RL

MBRTA80045RL

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 400A 3TOWER

0

FST16040L

FST16040L

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 80A TO249AB

0

FST7320M

FST7320M

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 35A D61-3M

0

UFT10010

UFT10010

GeneSiC Semiconductor

DIODE GEN PURP 100V 50A TO249AB

0

UFT7360M

UFT7360M

GeneSiC Semiconductor

DIODE GEN PURP 600V 70A D61-3M

0

MBRTA600200R

MBRTA600200R

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 300A 3TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top