Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBRT30045L

MBRT30045L

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 150A 3 TOWER

0

MBRF30040

MBRF30040

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 150A TO244AB

0

MURT20005

MURT20005

GeneSiC Semiconductor

DIODE MODULE 50V 200A 3TOWER

0

MBRTA80030

MBRTA80030

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 400A 3TOWER

0

MBR50020CT

MBR50020CT

GeneSiC Semiconductor

DIODE MODULE 20V 500A 2TOWER

0

MBRTA60030RL

MBRTA60030RL

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 300A 3TOWER

0

MBRTA80045L

MBRTA80045L

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 400A 3TOWER

0

MBRTA60060

MBRTA60060

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 300A 3TOWER

0

MBRT30035RL

MBRT30035RL

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 150A 3 TOWER

0

MBR50080CTR

MBR50080CTR

GeneSiC Semiconductor

DIODE MODULE 80V 500A 2TOWER

0

MBRTA80020L

MBRTA80020L

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 400A 3TOWER

0

MBRT50030R

MBRT50030R

GeneSiC Semiconductor

DIODE MODULE 30V 500A 3TOWER

0

UFT10020

UFT10020

GeneSiC Semiconductor

DIODE GEN PURP 200V 50A TO249AB

0

MBRF60020R

MBRF60020R

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 300A TO244AB

0

MBRT30080R

MBRT30080R

GeneSiC Semiconductor

DIODE MODULE 80V 300A 3TOWER

0

MBRT60040L

MBRT60040L

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 300A 3 TOWER

0

MBRTA60035R

MBRTA60035R

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 300A 3TOWER

0

MBRT40030RL

MBRT40030RL

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 200A 3 TOWER

0

MBRT50045

MBRT50045

GeneSiC Semiconductor

DIODE MODULE 45V 500A 3TOWER

0

MURT10005

MURT10005

GeneSiC Semiconductor

DIODE MODULE 50V 100A 3TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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