Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBR60035CTRL

MBR60035CTRL

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 300A 2 TOWER

0

MBRT30040L

MBRT30040L

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 150A 3 TOWER

0

MBRF40030

MBRF40030

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 200A TO244AB

0

FST63100M

FST63100M

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 30A D61-3M

0

MBRF60030

MBRF60030

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 300A TO244AB

0

MBRF30020R

MBRF30020R

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 150A TO244AB

0

MBRTA600100R

MBRTA600100R

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 300A 3TOWER

0

MBRF600100R

MBRF600100R

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 250A TO244AB

0

MBRTA80080R

MBRTA80080R

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 400A 3TOWER

0

MBRTA60040L

MBRTA60040L

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 300A 3TOWER

0

FST8335M

FST8335M

GeneSiC Semiconductor

DIODE MODULE 35V 80A D61-3M

0

MBRTA80035RL

MBRTA80035RL

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 400A 3TOWER

0

MURT40005

MURT40005

GeneSiC Semiconductor

DIODE MODULE 50V 400A 3TOWER

0

MBRTA80020

MBRTA80020

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 400A 3TOWER

0

MBRTA50080

MBRTA50080

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 250A 3TOWER

0

MBRTA80080

MBRTA80080

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 400A 3TOWER

0

FST6320M

FST6320M

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 30A D61-3M

0

UFT10060

UFT10060

GeneSiC Semiconductor

DIODE GEN PURP 600V 50A TO249AB

0

MBRT50060R

MBRT50060R

GeneSiC Semiconductor

DIODE MODULE 60V 500A 3TOWER

0

MBRT40040RL

MBRT40040RL

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 200A 3 TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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