Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
FST7330M

FST7330M

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 35A D61-3M

0

MBRF30060

MBRF30060

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 150A TO244AB

0

MBRTA600200

MBRTA600200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 300A 3TOWER

0

MBRT30040RL

MBRT30040RL

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 150A 3 TOWER

0

MURF20060

MURF20060

GeneSiC Semiconductor

DIODE MODULE 600V 200A TO244AB

0

MBR60030CTRL

MBR60030CTRL

GeneSiC Semiconductor

DIODE SCHOTTKY 30V 300A 2 TOWER

0

MBRF300200

MBRF300200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 150A TO244AB

0

MBR50030CTR

MBR50030CTR

GeneSiC Semiconductor

DIODE MODULE 30V 500A 2TOWER

0

MBR30020CTRL

MBR30020CTRL

GeneSiC Semiconductor

DIODE SCHOTTKY 20V 150A 2 TOWER

0

MBRF40035R

MBRF40035R

GeneSiC Semiconductor

DIODE MODULE 35V 400A TO244AB

0

MBRF12035

MBRF12035

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 60A TO244AB

0

MBRF40080R

MBRF40080R

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 200A TO244AB

0

FST16035L

FST16035L

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 80A TO249AB

0

MBR60035CTL

MBR60035CTL

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 300A 2 TOWER

0

MBRT60035L

MBRT60035L

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 300A 3 TOWER

0

MBRTA40040L

MBRTA40040L

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 200A 3TOWER

0

MBRTA800200R

MBRTA800200R

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 400A 3TOWER

0

MUR10005CT

MUR10005CT

GeneSiC Semiconductor

DIODE MODULE 50V 100A 2TOWER

0

MUR20005CTR

MUR20005CTR

GeneSiC Semiconductor

DIODE MODULE 50V 200A 2TOWER

0

MUR30005CTR

MUR30005CTR

GeneSiC Semiconductor

DIODE MODULE 50V 300A 2TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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