Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MURF40005R

MURF40005R

GeneSiC Semiconductor

DIODE GEN PURP 50V 200A TO244

0

MURF20020

MURF20020

GeneSiC Semiconductor

DIODE MODULE 200V 200A TO244

0

MURF40060R

MURF40060R

GeneSiC Semiconductor

DIODE GEN PURP 600V 200A TO244

0

MURF30010R

MURF30010R

GeneSiC Semiconductor

DIODE GEN PURP 100V 150A TO244

0

MURF20020R

MURF20020R

GeneSiC Semiconductor

DIODE MODULE 200V 200A TO244

0

MUR10060CT

MUR10060CT

GeneSiC Semiconductor

DIODE MODULE 600V 100A 2TOWER

0

MURF40020

MURF40020

GeneSiC Semiconductor

DIODE GEN PURP 200V 200A TO244

0

MURF20010

MURF20010

GeneSiC Semiconductor

DIODE MODULE 100V 200A TO244

0

MURF20005R

MURF20005R

GeneSiC Semiconductor

DIODE MODULE 50V 200A TO244

0

MURF30010

MURF30010

GeneSiC Semiconductor

DIODE GEN PURP 100V 150A TO244

0

MUR40005CTR

MUR40005CTR

GeneSiC Semiconductor

DIODE MODULE 50V 400A 2TOWER

0

MBR30045CTRL

MBR30045CTRL

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 150A 2 TOWER

0

FST8345SM

FST8345SM

GeneSiC Semiconductor

DIODE MODULE 45V 80A D61-3SM

0

MUR20005CT

MUR20005CT

GeneSiC Semiconductor

DIODE MODULE 50V 200A 2TOWER

0

MURF10010

MURF10010

GeneSiC Semiconductor

DIODE MODULE 100V 100A TO244

0

MBR30040CTRL

MBR30040CTRL

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 150A 2 TOWER

0

MUR30005CT

MUR30005CT

GeneSiC Semiconductor

DIODE MODULE 50V 300A 2TOWER

0

MURF20010R

MURF20010R

GeneSiC Semiconductor

DIODE MODULE 100V 200A TO244

0

MUR40005CT

MUR40005CT

GeneSiC Semiconductor

DIODE MODULE 50V 400A 2TOWER

0

MURF40060

MURF40060

GeneSiC Semiconductor

DIODE GEN PURP 600V 200A TO244

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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