Diodes - Rectifiers

Diodes - Rectifiers - Arrays

Image	Part Number	Description / PDF	Quantity	Rfq
	MBRT12060 GeneSiC Semiconductor	DIODE MODULE 60V 120A 3TOWER	0
	MURTA60040 GeneSiC Semiconductor	DIODE MODULE 400V 600A 3TOWER	0
	MBR2X060A100 GeneSiC Semiconductor	DIODE SCHOTTKY 100V 60A SOT227	0
	MBR30030CT GeneSiC Semiconductor	DIODE MODULE 30V 300A 2TOWER	0
	FST12035 GeneSiC Semiconductor	DIODE MODULE 35V 120A TO249AB	0
	MURT10060 GeneSiC Semiconductor	DIODE ARRAY GP 600V 100A 3TOWER	0
	MBRT30045 GeneSiC Semiconductor	DIODE MODULE 45V 300A 3TOWER	0
	MBR2X060A200 GeneSiC Semiconductor	DIODE SCHOTTKY 200V 60A SOT227	0
	MBRT12030R GeneSiC Semiconductor	DIODE MODULE 30V 120A 3TOWER	0
	FST160150 GeneSiC Semiconductor	DIODE SCHOTTKY 150V 80A TO249AB	0
	MBR2X050A180 GeneSiC Semiconductor	DIODE SCHOTTKY 180V 50A SOT227	0
	MBRT12080R GeneSiC Semiconductor	DIODE MODULE 80V 120A 3TOWER	0
	MSRTA400140(A) GeneSiC Semiconductor	DIODE MODULE 1.4KV 400A 3TOWER	0
	MBR120100CT GeneSiC Semiconductor	DIODE MODULE 100V 120A 2TOWER	0
	MBR40080CTR GeneSiC Semiconductor	DIODE MODULE 80V 400A 2TOWER	0
	MSRTA40080(A) GeneSiC Semiconductor	DIODE MODULE 800V 400A 3TOWER	0
	MBR12030CT GeneSiC Semiconductor	DIODE MODULE 30V 120A 2TOWER	0
	MBRT30060 GeneSiC Semiconductor	DIODE MODULE 60V 300A 3TOWER	0
	MURTA30060 GeneSiC Semiconductor	DIODE GEN PURP 600V 150A 3 TOWER	0
	MUR2X120A04 GeneSiC Semiconductor	DIODE GEN PURP 400V 120A SOT227	0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
Double Diode Arrays	Two independent diodes in a shared package, common cathode/anode configuration	Full-bridge rectifiers in SMPS
Quad Diode Arrays	Four diodes arranged as dual series/parallel circuits	Three-phase rectification in industrial equipment
High-Voltage Arrays	Rated above 600V with enhanced dielectric isolation	Power factor correction circuits
Low-Voltage Schottky Arrays	30V with low forward voltage drop (0.15-0.45V)	DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

TO-220/TO-247 for high-power applications
SOIC/SOT-23 for surface-mount designs
Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

Parameter	Description	Importance
Max Repetitive Reverse Voltage (V_RRM)	600V-1600V ratings determine circuit insulation level	Ensures safe operation under voltage spikes
Forward Current (I_F(AV))	1A-50A average current handling capacity	Dictates power delivery capability
Forward Voltage Drop (V_F)	0.55V-1.1V (Si), 0.15V-0.45V (Schottky)	Impacts conduction losses and efficiency
Operating Junction Temperature (T_J)	-55 C to 175 C	Determines thermal stability
Reverse Recovery Time (t_rr)	10ns-2 s	Affects switching performance

5. Application Areas

Power Supplies: Switch-mode power supplies (SMPS), battery chargers
Automotive: Alternator rectification, onboard chargers
Industrial: Motor drives, welding inverters
Renewables: Solar micro-inverters, wind turbine converters
Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Specifications
ON Semiconductor	MUR420	200V, 4A, 35ns recovery time
STMicroelectronics	STTH1R06A	600V, 1A, 50ns
Infineon Technologies	IDW40G65H5	650V, 40A, SiC Schottky
Diodes Inc.	B550-13-F	50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

Calculate required V_RRM with 20% safety margin
Verify I_F(AV) against RMS current values
Select package based on thermal dissipation needs
Consider SiC/GaN alternatives for high-frequency designs
Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
Miniaturization through chip-scale packaging
Integrated protection features (TVS + rectifier arrays)
Automotive-grade devices for 800V EV systems
AI-driven failure prediction models in manufacturing