Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBR40030CT

MBR40030CT

GeneSiC Semiconductor

DIODE MODULE 30V 400A 2TOWER

0

MUR20010CT

MUR20010CT

GeneSiC Semiconductor

DIODE MODULE 100V 200A 2TOWER

0

MBRT120200

MBRT120200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 60A 3 TOWER

0

MBRT12035R

MBRT12035R

GeneSiC Semiconductor

DIODE MODULE 35V 120A 3TOWER

0

MSRT10080(A)D

MSRT10080(A)D

GeneSiC Semiconductor

DIODE GEN PURP 800V 100A 3 TOWER

0

MSRTA6001

MSRTA6001

GeneSiC Semiconductor

DIODE MODULE 1.6KV 600A 3TOWER

0

MBRT40030

MBRT40030

GeneSiC Semiconductor

DIODE MODULE 30V 400A 3TOWER

0

MBRT400100R

MBRT400100R

GeneSiC Semiconductor

DIODE MODULE 100V 400A 3TOWER

0

MBR2X080A045

MBR2X080A045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 160A SOT227

36

MBRT30035R

MBRT30035R

GeneSiC Semiconductor

DIODE MODULE 35V 300A 3TOWER

16

MBR40080CT

MBR40080CT

GeneSiC Semiconductor

DIODE MODULE 80V 400A 2TOWER

0

MURTA20020R

MURTA20020R

GeneSiC Semiconductor

DIODE GEN PURP 200V 100A 3 TOWER

0

MURTA50020

MURTA50020

GeneSiC Semiconductor

DIODE MODULE 200V 500A 3TOWER

0

MBR2X100A120

MBR2X100A120

GeneSiC Semiconductor

DIODE SCHOTTKY 120V 100A SOT227

0

MBRT300150R

MBRT300150R

GeneSiC Semiconductor

DIODE SCHOTTKY 150V 150A 3 TOWER

0

GC2X8MPS12-247

GC2X8MPS12-247

GeneSiC Semiconductor

SIC DIODE 1200V 15A TO-247-3

176

FST10040

FST10040

GeneSiC Semiconductor

DIODE MODULE 40V 100A TO249AB

0

MSRTA300140(A)D

MSRTA300140(A)D

GeneSiC Semiconductor

DIODE MODULE 1.4KV 300A 3TOWER

0

MSRTA30060(A)D

MSRTA30060(A)D

GeneSiC Semiconductor

DIODE GEN PURP 600V 300A 3 TOWER

0

MBR2X100A045

MBR2X100A045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 100A SOT227

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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