Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
MBR40020CTR

MBR40020CTR

GeneSiC Semiconductor

DIODE MODULE 20V 400A 2TOWER

0

MUR2X060A02

MUR2X060A02

GeneSiC Semiconductor

DIODE GEN PURP 200V 120A SOT227

40

MBRT400200R

MBRT400200R

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 200A 3 TOWER

0

FST160100

FST160100

GeneSiC Semiconductor

DIODE MODULE 100V 160A TO249AB

0

MBR12020CT

MBR12020CT

GeneSiC Semiconductor

DIODE MODULE 20V 120A 2TOWER

0

MBR40045CTR

MBR40045CTR

GeneSiC Semiconductor

DIODE MODULE 45V 400A 2TOWER

0

MBRT60060R

MBRT60060R

GeneSiC Semiconductor

DIODE MODULE 60V 600A 3TOWER

0

MBRT20045

MBRT20045

GeneSiC Semiconductor

DIODE MODULE 45V 200A 3TOWER

0

MBRT40035R

MBRT40035R

GeneSiC Semiconductor

DIODE MODULE 35V 400A 3TOWER

0

MURT40040R

MURT40040R

GeneSiC Semiconductor

DIODE MODULE 400V 400A 3TOWER

21

MURT30060

MURT30060

GeneSiC Semiconductor

DIODE MODULE 600V 300A 3TOWER

0

FST16045

FST16045

GeneSiC Semiconductor

DIODE MODULE 45V 160A TO249AB

0

MSRTA400160(A)

MSRTA400160(A)

GeneSiC Semiconductor

DIODE MODULE 1.6KV 400A 3TOWER

0

MBRT20045R

MBRT20045R

GeneSiC Semiconductor

DIODE MODULE 45V 200A 3TOWER

0

MBRT300100R

MBRT300100R

GeneSiC Semiconductor

DIODE MODULE 100V 300A 3TOWER

0

MBR40060CT

MBR40060CT

GeneSiC Semiconductor

DIODE MODULE 60V 400A 2TOWER

0

MSRT200160(A)D

MSRT200160(A)D

GeneSiC Semiconductor

DIODE GEN 1.6KV 200A 3 TOWER

0

MBR2X030A080

MBR2X030A080

GeneSiC Semiconductor

DIODE SCHOTTKY 80V 30A SOT227

0

MBR2X030A045

MBR2X030A045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 60A SOT227

35

FST12040

FST12040

GeneSiC Semiconductor

DIODE MODULE 40V 120A TO249AB

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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