Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
FST12060

FST12060

GeneSiC Semiconductor

DIODE MODULE 60V 120A TO249AB

0

MURTA40060R

MURTA40060R

GeneSiC Semiconductor

DIODE GEN PURP 600V 200A 3 TOWER

0

MBR12045CTR

MBR12045CTR

GeneSiC Semiconductor

DIODE MODULE 45V 120A 2TOWER

18

MURTA50020R

MURTA50020R

GeneSiC Semiconductor

DIODE MODULE 200V 500A 3TOWER

0

MBRT40060

MBRT40060

GeneSiC Semiconductor

DIODE MODULE 60V 400A 3TOWER

0

FST120100

FST120100

GeneSiC Semiconductor

DIODE MODULE 100V 120A TO249AB

0

MBR12060CTR

MBR12060CTR

GeneSiC Semiconductor

DIODE MODULE 60V 120A 2TOWER

0

MSRTA20060(A)D

MSRTA20060(A)D

GeneSiC Semiconductor

DIODE GEN PURP 600V 200A 3 TOWER

0

MBR60045CT

MBR60045CT

GeneSiC Semiconductor

DIODE MODULE 45V 300A 2TOWER

0

MURTA400120R

MURTA400120R

GeneSiC Semiconductor

DIODE GEN 1.2KV 200A 3 TOWER

0

MURT10060R

MURT10060R

GeneSiC Semiconductor

DIODE ARRAY GP REV POLAR 3TOWER

0

MBR12030CTR

MBR12030CTR

GeneSiC Semiconductor

DIODE MODULE 30V 120A 2TOWER

0

MSRTA300160(A)D

MSRTA300160(A)D

GeneSiC Semiconductor

DIODE MODULE 1.6KV 300A 3TOWER

0

MBRT30045R

MBRT30045R

GeneSiC Semiconductor

DIODE MODULE 45V 300A 3TOWER

0

MURT20040

MURT20040

GeneSiC Semiconductor

DIODE MODULE 400V 200A 3TOWER

0

MSRT200100(A)

MSRT200100(A)

GeneSiC Semiconductor

DIODE MODULE 1KV 200A 3TOWER

0

MURTA50040

MURTA50040

GeneSiC Semiconductor

DIODE MODULE 400V 500A 3TOWER

0

GB2X50MPS12-227

GB2X50MPS12-227

GeneSiC Semiconductor

SIC DIODE 1200V 100A SOT-227

1

MUR2X030A06

MUR2X030A06

GeneSiC Semiconductor

DIODE GEN PURP 600V 60A SOT227

0

MBRT30030R

MBRT30030R

GeneSiC Semiconductor

DIODE MODULE 30V 300A 3TOWER

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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