Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAS69-05WFILM

BAS69-05WFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 15V SOT323

0

STTH30L06CT

STTH30L06CT

STMicroelectronics

DIODE ARRAY GP 600V 20A TO220AB

0

BAT30CFILM

BAT30CFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V SOT23-3

0

STPS40170CG

STPS40170CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 170V D2PAK

0

BYW51G-200-TR

BYW51G-200-TR

STMicroelectronics

DIODE ARRAY GP 200V 10A D2PAK

0

STTH6102TV1

STTH6102TV1

STMicroelectronics

DIODE MODULE 200V 30A ISOTOP

0

BAS69-04WFILM

BAS69-04WFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 15V SOT323

0

STPR2420CT

STPR2420CT

STMicroelectronics

DIODE ARRAY GP 200V 12A TO220AB

0

STPR1620CG-TR

STPR1620CG-TR

STMicroelectronics

DIODE ARRAY GP 200V 8A D2PAK

0

STPS2045CR

STPS2045CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V I2PAK

0

STTA6006TV2

STTA6006TV2

STMicroelectronics

DIODE MODULE 600V 30A ISOTOP

0

STPS3045CPIRG

STPS3045CPIRG

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V 3TOPI

0

BAS70-07P6FILM

BAS70-07P6FILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 70V SOT666

0

STTH200W06TV1

STTH200W06TV1

STMicroelectronics

DIODE MODULE 600V 100A ISOTOP

0

STTH802CFP

STTH802CFP

STMicroelectronics

DIODE ARRAY GP 200V 4A TO220FP

0

STTH10BC065CT

STTH10BC065CT

STMicroelectronics

DIODE ARRAY GP 650V 5A TO220AB

0

BYT16P-400

BYT16P-400

STMicroelectronics

DIODE ARRAY GP 400V 16A TO220AB

0

STPS30150CG

STPS30150CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 150V D2PAK

0

STPS4030CT

STPS4030CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V TO220AB

0

STPS40L45CG

STPS40L45CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V D2PAK

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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