Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
BAT30-07P6FILM

BAT30-07P6FILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V SOT666

0

STPS6045CP

STPS6045CP

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V SOT93

0

STPS41L60CG

STPS41L60CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V D2PAK

0

STTA6006TV1

STTA6006TV1

STMicroelectronics

DIODE MODULE 600V 30A ISOTOP

0

STPS10M80CFP

STPS10M80CFP

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V TO220FP

0

BYW51G-200

BYW51G-200

STMicroelectronics

DIODE ARRAY GP 200V 10A D2PAK

0

STTH802CB

STTH802CB

STMicroelectronics

DIODE ARRAY GP 200V 4A DPAK

0

STPS50U100CT

STPS50U100CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V TO220

0

STPS10L60CG

STPS10L60CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V D2PAK

0

STTH1602CG

STTH1602CG

STMicroelectronics

DIODE ARRAY GP 200V 10A D2PAK

0

STPS40100CT

STPS40100CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V TO220

0

BAT30SFILM

BAT30SFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V SOT23-3

0

STPS3045CFP

STPS3045CFP

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V TO220FP

0

STTA3006CW

STTA3006CW

STMicroelectronics

DIODE ARRAY GP 600V 15A TO247-3

0

STPS20M80CT

STPS20M80CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V TO220AB

0

STPS2045CG

STPS2045CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V D2PAK

0

STTA9012TV1

STTA9012TV1

STMicroelectronics

DIODE MODULE 1.2KV 45A ISOTOP

0

BAT46CWFILM

BAT46CWFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V SOT323

0

STPS30170CT

STPS30170CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 170V TO220

0

BAS69-06WFILM

BAS69-06WFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 15V SOT323

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
RFQ BOM Call Skype Email
Top