Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
STPS16150CG-TR

STPS16150CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 150V D2PAK

0

STPS15SM80CG-TR

STPS15SM80CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V D2PAK

0

STTH20LCD06CG-TR

STTH20LCD06CG-TR

STMicroelectronics

DIODE ARRAY GP 600V 10A D2PAK

0

STPS16150CG

STPS16150CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 150V D2PAK

0

BYT230PIV-400

BYT230PIV-400

STMicroelectronics

DIODE MODULE 400V 30A ISOTOP

0

STPS30L60CFP

STPS30L60CFP

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V TO220FP

0

STTH802CT

STTH802CT

STMicroelectronics

DIODE ARRAY GP 200V 4A TO220AB

0

STPS15SM80CR

STPS15SM80CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V I2PAK

0

STPS20L60CTN

STPS20L60CTN

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V TO220AB

0

STTH1302CT

STTH1302CT

STMicroelectronics

DIODE ARRAY GP 200V 6.5A TO220AB

0

STPS15SM80CFP

STPS15SM80CFP

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V TO220FP

0

BAS70-08SFILM

BAS70-08SFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 70V SOT323

0

STTH2003CG

STTH2003CG

STMicroelectronics

DIODE ARRAY GP 300V 10A D2PAK

0

STPS20L45CG

STPS20L45CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V D2PAK

0

BAT41-09P6FILM

BAT41-09P6FILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V SOT666

0

STTH60L06TV2

STTH60L06TV2

STMicroelectronics

DIODE MODULE 600V 40A ISOTOP

0

STPS20M80CR

STPS20M80CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V I2PAK

0

STPS20M60CG-TR

STPS20M60CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V D2PAK

0

STPS2545CG

STPS2545CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V D2PAK

0

BAT46AFILM

BAT46AFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V SOT23

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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