Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
STPS40120CTN

STPS40120CTN

STMicroelectronics

DIODE ARRAY SCHOTTKY 120V TO220

0

STPS30H60CG

STPS30H60CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V D2PAK

0

STPS30SM80CG-TR

STPS30SM80CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V D2PAK

0

STPS80L30CY

STPS80L30CY

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V MAX247

0

BAS69-09P6FILM

BAS69-09P6FILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 15V SOT666

0

BAS69-07P6FILM

BAS69-07P6FILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 15V SOT666

0

BAT46SWFILM

BAT46SWFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V SOT323

0

STPS30M80CR

STPS30M80CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V I2PAK

0

STPS4045CP

STPS4045CP

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V SOT93

0

BYV54V-200

BYV54V-200

STMicroelectronics

DIODE MODULE 200V 50A ISOTOP

0

BYT231PIV-1000

BYT231PIV-1000

STMicroelectronics

DIODE MODULE 1KV 30A ISOTOP

0

STPS40SM80CR

STPS40SM80CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V I2PAK

0

STPS15M80CR

STPS15M80CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V I2PAK

0

STTA9012TV2

STTA9012TV2

STMicroelectronics

DIODE MODULE 1.2KV 45A ISOTOP

0

STPS2530CG-TR

STPS2530CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V D2PAK

0

STTH3002CPI

STTH3002CPI

STMicroelectronics

DIODE ARRAY GP 200V 15A 3TOPI

0

STPS2530CG

STPS2530CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V D2PAK

0

STTH12002TV1

STTH12002TV1

STMicroelectronics

DIODE MODULE 200V 60A ISOTOP

0

STTH602CFP

STTH602CFP

STMicroelectronics

DIODE ARRAY GP 200V 3A TO220FP

0

STPS10H100CG

STPS10H100CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V D2PAK

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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