Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
STTH12012TV2

STTH12012TV2

STMicroelectronics

DIODE MODULE 1.2KV 60A ISOTOP

0

STPS16150CR

STPS16150CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 150V I2PAK

0

STPS15M80CFP

STPS15M80CFP

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V TP220FP

0

STPS10L45CT

STPS10L45CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V TO220AB

0

STPS20SM80CT

STPS20SM80CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V TO220AB

0

STPS6045CPIRG

STPS6045CPIRG

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V 3TOPI

0

STPS660CB-TR

STPS660CB-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V 3A DPAK

0

BAT41-07P6FILM

BAT41-07P6FILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V SOT666

0

STPS10170CG

STPS10170CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 170V D2PAK

0

BAT54-09P6FILM

BAT54-09P6FILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 40V SOT666

0

BYW99PI-200RG

BYW99PI-200RG

STMicroelectronics

DIODE ARRAY GP 200V 15A 3TOPI

0

STPR620CT

STPR620CT

STMicroelectronics

DIODE ARRAY GP 200V 3A TO220AB

0

STPS30H100CTN

STPS30H100CTN

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V TO220

0

STPR1020CB-TR

STPR1020CB-TR

STMicroelectronics

DIODE ARRAY GP 200V 5A DPAK

0

STTH30L06CG

STTH30L06CG

STMicroelectronics

DIODE ARRAY GP 600V 20A D2PAK

0

STPS30L45CR

STPS30L45CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V I2PAK

0

STPS10L45CG-TR

STPS10L45CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 45V D2PAK

0

STTH506TTI

STTH506TTI

STMicroelectronics

DIODE ARRAY GP 600V 5A TO220AB

0

BYV52PI-200RG

BYV52PI-200RG

STMicroelectronics

DIODE ARRAY GP 200V 30A 3TOPI

0

STPS10150CG

STPS10150CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 150V D2PAK

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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