Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
STTH20LCD06CT

STTH20LCD06CT

STMicroelectronics

DIODE ARRAY GP 600V 10A TO220AB

0

STPS50U100CR

STPS50U100CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V I2PAK

0

STPS20M80CFP

STPS20M80CFP

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V TO220FP

0

STTH30AC06CP

STTH30AC06CP

STMicroelectronics

DIODE ARRAY GP 600V 15A TO3PF

0

STPS40SM100CG

STPS40SM100CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V D2PAK

0

STTH1302CG

STTH1302CG

STMicroelectronics

DIODE ARRAY GP 200V 6.5A D2PAK

0

STPS80H100CY

STPS80H100CY

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V MAX247

0

STPR1020CB

STPR1020CB

STMicroelectronics

DIODE ARRAY GP 200V 5A DPAK

0

STPR1620CT

STPR1620CT

STMicroelectronics

DIODE ARRAY GP 200V 8A TO220AB

0

STTH1002CG

STTH1002CG

STMicroelectronics

DIODE ARRAY GP 200V 8A D2PAK

0

STPS10SM80CR

STPS10SM80CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V I2PAK

0

STTH20L03CG-TR

STTH20L03CG-TR

STMicroelectronics

DIODE ARRAY GP 300V 10A D2PAK

0

STPS30170CG

STPS30170CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 170V D2PAK

0

STPS30L40CT

STPS30L40CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 40V TO220AB

0

STPS30M80CG-TR

STPS30M80CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V D2PAK

0

BAT41SWFILM

BAT41SWFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V SOT323

0

STPS15M80CT

STPS15M80CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V TO220AB

0

BAT54-07P6FILM

BAT54-07P6FILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 40V SOT666

0

STPS20SM80CR

STPS20SM80CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V I2PAK

0

STTH120R04TV2

STTH120R04TV2

STMicroelectronics

DIODE MODULE 400V 60A ISOTOP

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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