Diodes - Rectifiers - Arrays

Image Part Number Description / PDF Quantity Rfq
STTA12006TV1

STTA12006TV1

STMicroelectronics

DIODE MODULE 600V 60A ISOTOP

0

BYW51FP-200

BYW51FP-200

STMicroelectronics

DIODE ARRAY GP 200V 10A TO220FP

0

STPS30L30CG

STPS30L30CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V D2PAK

0

STPS16170CG

STPS16170CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 170V D2PAK

0

STPS30H60CW

STPS30H60CW

STMicroelectronics

DIODE ARRAY SCHOTTKY 60V TO247-3

0

STPS15H100CH

STPS15H100CH

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V IPAK

0

STTH6112TV2

STTH6112TV2

STMicroelectronics

DIODE MODULE 1.2KV 30A ISOTOP

0

BYV52-200

BYV52-200

STMicroelectronics

DIODE ARRAY GP 200V 30A SOT93

0

STPS10120CFP

STPS10120CFP

STMicroelectronics

DIODE ARRAY SCHOTTKY 120V TO220F

0

STPS640CT

STPS640CT

STMicroelectronics

DIODE ARRAY SCHOTTKY 40V TO220AB

0

STTH3006TPI

STTH3006TPI

STMicroelectronics

DIODE ARRAY GP 600V 30A 3TOPI

0

BAT30AWFILM

BAT30AWFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 30V SOT323

0

STPS10M80CR

STPS10M80CR

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V I2PAK

0

STPR1620CG

STPR1620CG

STMicroelectronics

DIODE ARRAY GP 200V 8A D2PAK

0

BAT41CWFILM

BAT41CWFILM

STMicroelectronics

DIODE ARRAY SCHOTTKY 100V SOT323

0

STTH16R04CFP

STTH16R04CFP

STMicroelectronics

DIODE ARRAY GP 400V 8A TO220FP

0

STPS15M80CG-TR

STPS15M80CG-TR

STMicroelectronics

DIODE ARRAY SCHOTTKY 80V D2PAK

0

STPS30L40CG

STPS30L40CG

STMicroelectronics

DIODE ARRAY SCHOTTKY 40V D2PAK

0

STPS20L120CFP

STPS20L120CFP

STMicroelectronics

DIODE ARRAY SCHOTTKY 120V TO220F

0

STTH60SW03CW

STTH60SW03CW

STMicroelectronics

DIODE ARRAY GP 300V 30A TO247

0

Diodes - Rectifiers - Arrays

1. Overview

Rectifier arrays are discrete semiconductor devices integrating multiple diodes in a single package to perform AC-to-DC conversion, voltage clamping, or signal demodulation. These arrays are critical in power management systems, enabling efficient energy conversion and circuit protection. Their compact design reduces PCB space requirements while maintaining reliability in high-current or high-voltage applications.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
Double Diode ArraysTwo independent diodes in a shared package, common cathode/anode configurationFull-bridge rectifiers in SMPS
Quad Diode ArraysFour diodes arranged as dual series/parallel circuitsThree-phase rectification in industrial equipment
High-Voltage ArraysRated above 600V with enhanced dielectric isolationPower factor correction circuits
Low-Voltage Schottky Arrays 30V with low forward voltage drop (0.15-0.45V)DC-DC converters in mobile devices

3. Structure and Composition

Rectifier arrays typically use silicon epitaxial planar technology with diffusion-bonded junctions. Standard packages include:

  • TO-220/TO-247 for high-power applications
  • SOIC/SOT-23 for surface-mount designs
  • Dual-inline packages (DIP) with through-hole mounting

Internal structure features monolithically integrated diodes with shared thermal vias, while advanced devices employ silicon carbide (SiC) for higher efficiency.

4. Key Technical Parameters

ParameterDescriptionImportance
Max Repetitive Reverse Voltage (VRRM)600V-1600V ratings determine circuit insulation levelEnsures safe operation under voltage spikes
Forward Current (IF(AV))1A-50A average current handling capacityDictates power delivery capability
Forward Voltage Drop (VF)0.55V-1.1V (Si), 0.15V-0.45V (Schottky)Impacts conduction losses and efficiency
Operating Junction Temperature (TJ)-55 C to 175 CDetermines thermal stability
Reverse Recovery Time (trr)10ns-2 sAffects switching performance

5. Application Areas

  • Power Supplies: Switch-mode power supplies (SMPS), battery chargers
  • Automotive: Alternator rectification, onboard chargers
  • Industrial: Motor drives, welding inverters
  • Renewables: Solar micro-inverters, wind turbine converters
  • Consumer: TV power adapters, LED lighting drivers

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
ON SemiconductorMUR420200V, 4A, 35ns recovery time
STMicroelectronicsSTTH1R06A600V, 1A, 50ns
Infineon TechnologiesIDW40G65H5650V, 40A, SiC Schottky
Diodes Inc.B550-13-F50V, 5A, 0.3V drop Schottky

7. Selection Guidelines

  • Calculate required VRRM with 20% safety margin
  • Verify IF(AV) against RMS current values
  • Select package based on thermal dissipation needs
  • Consider SiC/GaN alternatives for high-frequency designs
  • Evaluate RoHS compliance for environmental requirements

8. Industry Trends

Key developments include:

  • Transition to wide bandgap materials (SiC/GaN) for 90%+ efficiency
  • Miniaturization through chip-scale packaging
  • Integrated protection features (TVS + rectifier arrays)
  • Automotive-grade devices for 800V EV systems
  • AI-driven failure prediction models in manufacturing
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